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Measurement of High Energy Neutron Induced Cross Sections for Chromium
S. Sekimoto,T. Utsunomiya,H. Yashima,H. Joto,S. Shibata,K. Ninomiya,D. Satoh,Y. Iwamoto,T. Omoto,R. Nakagaki,N. Takahashi,A. Shinohara,T. Shima,M. Hagiwara,H. Matsumura,K. Nishiizumi,Y. Matsushi,H. Ma 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.23
Reaction cross sections for Cr induced by neutrons at 287 MeV were measured by using ^7Li(p,n) reaction at N0 beam line in the Research Center for Nuclear Physics (RCNP), Osaka University. To estimate quasi-monoenergetic neutron-induced cross sections, the Cr sample was irradiated on the two angles of 0° and 30° for the axis of the primary proton beam. Proton-induced reaction cross sections for Cr at 300 MeV were also measured. The measured cross section data in the ^(nat)Cr(n,x) and ^(nat)Cr(p,x) reactions are compared with the literature values and the JENDL high-energy file. Furthermore, those in the ^(nat)Cr(n,x) reactions are also compared with those in the ^(nat)Cr(p,x) reaction.
J. H. Oh,G. Kwon,D. Y. Mun,D. J. Kim,I. K. Han,H. W. Yoo,J. C. Jo,Y. Ominami,T. Ninomiya,M. Nozoe 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.1
We have developed a highly sensitive inspection technique based on an electron beam inspection for detecting the contact failure of a poly-Si plugged layer. It was difficult to distinguish the contact failure from normal landing plugs with high impedance. Normally, the thermal annealing method has been used to decrease the impedance of poly-Si plugs and this method increases the difference of charged characteristics and voltage contrast. However, the additional process made the loss of time and broke down the device characteristics. Here, the interval scanning method without thermal annealing was effectively applied to enhance the difference of surface voltage between well-contacted poly-Si plugs and incomplete contact plugs. It is extremely useful to detect the contact failures of non-annealed plug contacts with high impedance.
Oh, J.H.,Kwon, G.,Mun, D.Y.,Kim, D.J.,Han, I.K.,Yoo, H.W.,Jo, J.C.,Ominami, Y.,Ninomiya, T.,Nozoe, M. The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.1
We have developed a highly sensitive inspection technique based on an electron beam inspection for detecting the contact failure of a poly-Si plugged layer. It was difficult to distinguish the contact failure from normal landing plugs with high impedance. Normally, the thermal annealing method has been used to decrease the impedance of poly-Si plugs and this method increases the difference of charged characteristics and voltage contrast. However, the additional process made the loss of time and broke down the device characteristics. Here, the interval scanning method without thermal annealing was effectively applied to enhance the difference of surface voltage between well-contacted poly-Si plugs and incomplete contact plugs. It is extremely useful to detect the contact failures of non-annealed plug contacts with high impedance.