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Yang, JungYup,Nam, Junggyu,Kim, Dongseop,Kim, GeeYeong,Jo, William,Kang, Yoonmook,Lee, Dongho American Institute of Physics 2015 Applied Physics Letters Vol.107 No.19
<P> Cu(In,Ga)(Se,S)<SUB>2</SUB> (CIGSS) absorber layers were fabricated by using a modified two-stage sputter and a sequential selenization/sulfurization method, and the sulfurization process is changed from one-step to two-step. The two-step sulfurization was controlled with two different H)<SUB>2</SUB>S gas concentrations during the sulfurization treatment. This two-step process yielded remarkable improvements in the efficiency (+0.7%), open circuit voltage (+14mV), short circuit current (+0.23mA/cm<SUP>2</SUP>), and fill factor (+0.21%) of a CIGSS device with 30×30cm<SUP>2</SUP> in size, owing to the good passivation at the grain boundary surface, uniform material composition among the grain boundaries, and modified depth profile of Ga and S. The deterioration of the P/N junction quality was prevented by the optimized S content in the CIGSS absorber layer. The effects of the passivation quality at the grain boundary surface, the material uniformity, the compositional depth profiles, the microstructure, and the electrical characteristics were examined by Kelvin probe force microscopy, X-ray diffraction, secondary ion mass spectrometry, scanning electron microscopy, and current-voltage curves, respectively. The two-step sulfurization process is experimentally found to be useful for obtaining good surface conditions and, enhancing the efficiency, for the mass production of large CIGSS modules. </P>
Scaling Up Issues During Application of Large Size Cu(In,Ga)(Se,S)<sub>2</sub> Solar Module
Yang, JungYup,Lee, Dongho,Kim, Dongseop,Kim, Youngso,Kang, Yoonmook,Lee, Yongjei,Cha, Dukjoon,Nam, Junggyu American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.11
<P>Polycrystalline Cu(In, Ga)(Se, S)(2) (CIGSSe) thin film solar modules have significant potential for improved efficiency and reduced production costs. Such cell with an efficiency of about 22.3% was reported in Japanese Company. This efficiency approaches the best efficiency that has been achieved with multi-crystalline silicon solar cells. In addition, CIGSSe based thin film solar cells feature excellent low light behavior, outdoor power generation, and light absorption characteristics. However, there is still a significant gap between the efficiencies of small cells made in laboratory and those of large modules made via mass production, even though many companies have studied mass production technology. Therefore, further manufacturing technology development is necessary to achieve high efficiencies in mass production. We have investigated technologies for mass production of large (16 x 90 cm(2)) CIGSSe modules fabricated via a two-step sputter and selenization/sulfurization method with Cd-free buffer layer. We have focused on film homogeneity over the area of the solar cell, the bottom electrode, and the absorber layer. In addition, we have optimized formation of the absorber layer and transparent conducting oxide layer, as well as the monolithic pattern design. The resulting improvements in module power come from better thin film uniformity and an optimized the monolithic pattern design.</P>
Observation of inverted hysteresis loops in cobalt nanoparticles fabrication by laser irradiation
JungYup Yang,JuHyung Kim,ChaeOk Kim,JinPyo Hong 한국자기학회 2006 한국자기학회 학술연구발표회 논문개요집 Vol.16 No.1
We have investigated negative remanence in Co NP system. TheCo NPs were uniquely fabricated by using a laser irradiation technique. Magnetization measurements performed on Co NP system show negative remanence taken at temperatures higher than 92 K. The observed negative remanence correlates to the blocking temperature of superparamagnetism. Although we have no clear explanation for negative remanence, this behavior is associated to the magnetic coupling characteristic between the ferromagnetic Co NP and superparamagnetic Co NP.
Lee, Dongho,Yang, JungYup,Kim, Young-Su,Mo, Chan B.,Park, Sungchan,Kim, ByoungJune,Kim, Dongseop,Nam, Junggyu,Kang, Yoonmook Elsevier 2016 Solar energy materials and solar cells Vol.149 No.-
<P><B>Abstract</B></P> <P>In this study, we systematically investigated the performance loss factors in Cu(InGa)(SSe)<SUB>2</SUB> (CIGSSe) solar cells with various Cu/(Ga+In) (CGI) ratios, which were fabricated with sputtering and sequential selenization/sulfurization processes. The effects of the CGI ratio on the CIGSSe solar cells were determined by measuring the current–voltage (IV) curves and junction capacitance of the solar cells, as well as by performing X-ray analysis techniques on the cells. An increase in the defect density and decrease in the free carrier density were observed in samples with high Cu concentrations (CGI ratio >0.89), which resulted in a drastic decrease in the open-circuit voltage (<I>V</I> <SUB>OC</SUB>) and fill factor (FF). The temperature-dependent IV (IVT) and X-ray diffraction (XRD) results of the bulk characterization corresponded well with the capacitance measurements for all CGI ratios. The low crystal quality and short minority-carrier diffusion length at high CGI ratios resulted in a significant bulk recombination rate. A qualitative analysis of the interface characteristics was performed with IVT measurements, and the results showed that the recombination activation energy in the samples with high CGI ratios was lower than the bandgap (<I>E</I> <SUB>g</SUB>), decreasing the <I>V</I> <SUB>OC</SUB> of these devices. For the samples with high CGI ratios, their inferior bulk and interface characteristics caused recombination to occur at the interface as well as in the bulk. However, the interface recombination rate was negligible for the samples with low CGI ratios (CGI ratio <0.89). In addition, a CIGSSe solar module was fabricated on a mass production assembly line, with the size of the CIGSSe solar module the same as that of commercially available crystalline-Si-based solar modules. The record efficiency of a solar module with a total area of is 16.0%.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Explain the effect of CGI ratio in CIGSSe fabricated by heat treatment of precursor. </LI> <LI> The characterization of junction properties <I>via</I> electrical measurement. </LI> <LI> Short carrier diffusion length at high CGI samples due to the poor crystal quality. </LI> <LI> Fabrication of 16% high efficiency CIGSSe module based on the optimum CGI ratio. </LI> </UL> </P>
Electrical and Optical Properties for TCO/Si Junction of EWT Solar Cells
송진섭(Song, Jinseob),양정엽(Yang, Jungyup),이준석(Lee, Junseok),홍진표(Hong, Jinpyo),조영현(Cho, Younghyun) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about 6{times}10^{-4}{Omega}cm at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained 0.0705{Omega}cm² at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained 0.1821{Omega}cm². Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.