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만성 활동성 간염에 있어서 Ursodeoxycholic acid의 치료효과
김성록,안병철,윤영미,탁원영,곽규식,최용환,정준모 慶北大學校 醫科大學 1991 慶北醫大誌 Vol.32 No.4
The purpose of this study is to evaluate the clinical and biochemical effects of SGD-F^(R)(UDCA, Vitamin B_1, Vitamin B_2 complex) in chronic active hepatitis. Observed cases were given orally after each meal(three times a day) for 4 weeks. The results were as follows: 1. Among subjective symptoms, improvement rate showed in easy fatigability 86.7%, anorexia 68.0%, indigestion 80.0%, nausea and vomiting 72.7%, RUQ pain 83.3%. 2. Biochemical parameters such as SGOT, SGPT, showed to be improved significantly after the 4 weeks treatment.(p<0.01) 3. There was no specific side effect during the study period in all cases. In conclusion, SGD-F^(R) capsule may be safe and effective for chronic active hepatitis.
In-Tak Cho,Ju-Wan Lee,Jun-Mo Park,Woo-Seok Cheong,Chi-Sun Hwang,Joon-Seop Kwak,Il-Hwan Cho,Hyuck-In Kwon,Hyungcheol Shin,Byung-Gook Park,Jong-Ho Lee IEEE 2012 IEEE electron device letters Vol.33 No.12
<P>A high-performance amorphous indium-gallium-zinc-oxide thin-film transistor (TFT) inverter, which is composed of an enhancement mode driver and a depletion mode load, is implemented by selectively inducing the negative bias illumination temperature stress (NBITS) to the load TFT. Under NBITS, the transfer curve of the load TFT shows a parallel shift into the negative bias direction without a significant change in the subthreshold slope and recovers very slowly after terminating the NBITS even under harsh bias and temperature stress conditions. The proposed inverter shows much improved switching characteristics including higher voltage gain, wider swing range, and higher noise margins compared to the conventional inverter with an enhancement load.</P>
Park, Jun-Mo,Cho, In-Tak,Kang, Won-Mook,Park, Byung-Gook,Lee, Jong-Ho American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.5
<P>Intrinsic drain current-gate voltage characteristics (I-D-V-GS) of the WSe2 field effect transistors (FETs) are obtained by adopting single channel pulsed I-V (PIV) measurement. In the transfer curves measured by a typical DC method, the hysteresis is large and affected by a gate bias (V-GS) sweeping range. In addition, the threshold voltage (V-th) shift is observed as a drain bias (V-DS) increases. By adopting the single channel PIV measurement with a short on time (t(on), similar to 10(-4) s), a long off time (t(off), similar to 1 s), and a base voltage (V-base, V-GS during t(off)) of 0 V, the hysteresis-free I-D-V-GS curves are demonstrated regardless of the V-GS sweeping range. Furthermore, we also show that the V-th shift is negligible in the transfer curves measured by the single channel PIV with the V-base of the half of the V-DS, which makes V-GS stress during t(off) identical to the average channel potential. With elimination of the V-GS and V-DS stress, we demonstrated the intrinsic transfer characteristics of the WSe2 FETs showing ignorable hysteresis without V-th shift and remarkably enhanced mobility and conductance.</P>