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Face Detection and Extraction Based on Ellipse Clustering Method in YCbCr Space
Jia, Shi,Woo, Chong-Ho Korea Multimedia Society 2010 멀티미디어학회논문지 Vol.13 No.6
In this paper a method for detecting and extracting the face from the image in YCbCr spaceis proposed. The face region is obtained from the complex original image by using the difference method and the face color information is taken from the reduced face region throughthe Ellipse clustering method. The experimental results showed that the proposed method can efficiently detect and extract the face from the original image under the general light intensity except for low luminance.
Face Detection and Extraction Based on Combined Difference and Ellipse Clustering Method
시가(Jia Shi),우종호(Chong Ho Woo) 한국정보과학회 2009 한국정보과학회 학술발표논문집 Vol.36 No.2C
본 논문에서는 차분 방법과 타원 군집 방법의 결합한 방법을 통해서 얼굴을 검출하고 추출하는 방법을 제안하였다. YCbCr공간에서 차분방법을 이용해서 얼굴 구역을 검출한 후에 타원군집방법을 사용하여 얼굴의 피부색정보를 추출한다. 실행결과 실제 복잡한 배경에서 얼굴을 검출할 뿐만 아니라 얼굴의 피부색정보를 구한다. 이 방법을 사용하면 광도의 영향을 적게 받고, 데이트의 저장공간을 절약할 수 있다. 이 방법은 실시간 얼굴검출시스템과 피부색 기반의 얼굴인식시스템에 활용할 수 있다. In this paper a method combined the difference method and ellipse clustering method is proposed for efficient face detection and complete extraction. This gets a general facial region by processing the image of face in YCbCr space using the difference method and obtains the whole face color information through the Ellipse clustering method. The experimental results show that we can get the location of the face and the face color information, and extract the face from a complex original image in reality. It is less sensitive to lighting and requires less storage space for the data. This method is applicable to real-time face detection system and face recognition system based on skin color.
Organic Thin-Film-Transistor Arrays for Active-Matrix Display on Flexible Substrate
Cheng-Chung Lee,Hsiang-Yuan Cheng,Jia-Chong Ho,Tarng-Shiang Hu 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Differently from a traditional inorganic transistor, the organic thin-film transistor can be fabricated at low temperature, so we can choose a light, thin, and cheap plastic substrate to replace glass substrate. Here, an organic thin-film transistor (OTFT) has been formed on plastic substrate. An active-matrix back plate with 64 × 128 pixels has been fabricated to drive a TNLCD. We achieved a field-effect mobility of 0.03 cm2/V·s and on/off current ratio of about 105 for the pentacene OTFT on plastic substrate. Besides vacuum deposition, these properties offer potential methods to fabricate OTFT on flat panel displays, such as spin coating, ink-jet printing, and even a roll-to-roll process.
Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors
Chen, Liang‐,Hsiang,Hu, Tarng‐,Shiang,Huang, Peng‐,Yi,Kim, Choongik,Yang, Ching‐,Hao,Wang, Juin‐,Jie,Yan, Jing‐,Yi,Ho, Jia‐,Chong,Lee, Cheng‐,Chung,Chen WILEY‐VCH Verlag 2013 Chemphyschem Vol.14 No.12
<P><B>Abstract</B></P><P>A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and <I>p</I>‐channel OTFT transport with hole mobilities as high as ∼0.12 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.</P>
Huang, Peng-Yi,Chen, Liang-Hsiang,Kim, Choongik,Chang, Hsiu-Chieh,Liang, You-jhih,Feng, Chieh-Yuan,Yeh, Chia-Ming,Ho, Jia-Chong,Lee, Cheng-Chung,Chen, Ming-Chou American Chemical Society 2012 ACS APPLIED MATERIALS & INTERFACES Vol.4 No.12
<P>Three benzo[<I>d</I>,<I>d</I>′]thieno[3,2-<I>b</I>;4,5-<I>b</I>′]dithiophene (<B>BTDT</B>) derivatives, end-functionalized with benzothiophenyl (<B>BT-BTDT</B>; <B>2</B>), benzothieno[3,2-b]thiophenyl (<B>BTT-BTDT</B>; 3), and benzo[<I>d</I>,<I>d</I>′]thieno[3,2-<I>b</I>;4,5-<I>b</I>′]dithiophenyl (<B>BBTDT</B>; <B>4</B>), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of <B>BTDT</B> with improved synthetic yield was achieved, which enabled the efficient realization of new <B>BTDT</B>-based semiconductors. All of the <B>BTDT</B> compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm<SUP>2</SUP>/(V s) and a current on/off ratio of 1 × 10<SUP>7</SUP>, as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-12/am3022448/production/images/medium/am-2012-022448_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am3022448'>ACS Electronic Supporting Info</A></P>