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Raja, Jayapal,Nguyen, Cam Phu Thi,Lee, Changmin,Balaji, Nagarajan,Chatterjee, Somenath,Jang, Kyungsoo,Kim, Hyoungsub,Yi, Junsin IEEE 2016 IEEE electron device letters Vol.37 No.10
<P>An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H<SUB>2</SUB>O<SUB>2</SUB> treated Aluminum oxide (Al<SUB>2</SUB>O<SUB>3</SUB>) tunneling layer is reported. A better performance in retention of <TEX>$\sim 92$</TEX>% (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm<SUP>2</SUP>/ <TEX>$\text {V}\cdot \text {s}$</TEX> were obtained in H<SUB>2</SUB>O<SUB>2</SUB> treated TFT-NVM devices compared with untreated one. Furthermore, employing the H<SUB>2</SUB>O<SUB>2</SUB>treatment in the Al<SUB>2</SUB>O<SUB>3</SUB> layer provided oxygen-rich (O/Al ratio = 1.45) and OH<SUP>−</SUP> residuals free Al<SUB>2</SUB>O<SUB>3</SUB>, which effectively minimized the interface states ( <TEX>$1.34 \times 10^{11}$</TEX> cm <TEX>$^{-2}$</TEX> eV <TEX>$^{-1})$</TEX> between the ITZO/(Al<SUB>2</SUB>O<SUB>3</SUB>/SiO<SUB><I>x</I></SUB>/SiO<SUB>2</SUB>) stack through strong oxidation. These results suggest that high-quality Al<SUB>2</SUB>O<SUB>3</SUB> dielectric layer can be obtained through cost-effective H<SUB>2</SUB>O<SUB>2</SUB> oxidation techniques for TFT-NVM devices.</P>
Jayapal Raja,Kyungsoo Jang,Hong Hanh Nguyen,Thanh Thuy Trinh,Woojin Choi,이준신 한국물리학회 2013 Current Applied Physics Vol.13 No.1
a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (pd) in the range of 0.74e2.22 W/cm2. The correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of pd. At a pd of 1.72 W/cm2 a-IGZO film had smoothest surface roughness (0.309 nm) with In-rich and Ga-poor cation compositions as a channel. This structurally ordered TFTs exhibited a high field effect mobility of 9.14 cm2/Vs, a sub-threshold swing (S.S.) of 0.566 V/dec, and an oneoff ratio of 107. Additionally, the Vth shift in hysteresis loop is almost eliminated. It was shown that the densification of the a-IGZO film resulted in the reduction of its interface trap density (1.83 ×1012 cm-2), which contributes for the improvement in the electrical and thermal stability.
Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review
Jayapal Raja,이준신,장경수,Cam Phu Thi Nguyen,Nagarajan Balaji,Shahzada Qamar Hussain,Somenath Chatterjee 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review
Raja, Jayapal,Jang, Kyungsoo,Nguyen, Cam Phu Thi,Yi, Junsin,Balaji, Nagarajan,Hussain, Shahzada Qamar,Chatterjee, Somenath The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.5
Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
Kyungsoo Jang,Raja, Jayapal,Youn-Jung Lee,Doyoung Kim,Junsin Yi IEEE 2013 IEEE electron device letters Vol.34 No.9
<P>We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (X<SUB>c</SUB>) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μ<SUB>FE</SUB>) of 37.2 cm<SUP>2</SUP>/V·s, high ON/OFF current ratio (I<SUB>ON</SUB>/I<SUB>OFF</SUB>) of ~ 1×10<SUP>7</SUP>, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and X<SUB>c</SUB>, μ<SUB>FE</SUB>, I<SUB>ON</SUB>/I<SUB>OFF</SUB>, and S.S surprisingly degraded to 14.4 cm<SUP>2</SUP>/V·s, ~ 4×10<SUP>4</SUP>, and 4.01, respectively. Our high ITZO TFTs with μ<SUB>FE</SUB> of 37.2 cm<SUP>2</SUP>/V·s, obtained thorough control of the N<SUB>CH</SUB>, In content, and X<SUB>c</SUB>, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.</P>
Advances in High Efficiency Back Contact Back Junction Solar Cells
Balaji, Nagarajan,Park, Cheolmin,Raja, Jayapal,Yi, Junsin Korea Photovoltaic Society 2015 Current Photovoltaic Research Vol.3 No.2
In the past few decade's researchers, scientists, engineers of photovoltaic (PV) industry are working towards low cost high efficiency Si solar cells. Over the last decade the interest in back contact solar cell has been acquiring as well as a gradual introduction to industrial applications is increasing. As an alternative to conventional solar cells with a front and rear contact, the back-contact cells has remained a research topic. The aim of this work is to present a comprehensive summary of results incurred in the back contact back junction solar cells such as interdigitated back-contact (IBC), emitter wrap-through (EWT) and metallization wrap-through (MWT) over the years.
Nguyen, Cam Phu Thi,Raja, Jayapal,Kim, Sunbo,Jang, Kyungsoo,Le, Anh Huy Tuan,Lee, Youn-Jung,Yi, Junsin Elsevier 2017 APPLIED SURFACE SCIENCE - Vol.396 No.-
<P><B>Abstract</B></P> <P>This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95cm<SUP>2</SUP>/V·s) compared with the ITZO-only TFTs (∼34cm<SUP>2</SUP>/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39V compared with 6.10 and −6.79V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E<SUB>A</SUB> were 0.38eV/V and 0.54eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO<SUB>2</SUB> reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The characteristics of thin film transistors using double active layers are examined. </LI> <LI> Electrical characteristics have been improved for the double active layers devices. </LI> <LI> The total trap density can be decreased by insert-ion of ultrathin ITO film. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>