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Bae, S.Y.,Lee, D.S.,Kong, B.H.,Cho, H.K.,Kaeding, J.F.,Nakamura, S.,DenBaars, S.P.,Speck, J.S. Elsevier 2011 Current Applied Physics Vol.11 No.3
(112@?2) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1<SUP>o</SUP> to +1<SUP>o</SUP>. While the coexistence of (112@?2) surface and inclined {101@?1} surfaces was observed on GaN films on the on-axis m-plane sapphire substrates, {101@?1} surfaces were dominant on the GaN films on the +1<SUP>o</SUP> miscut sapphire substrates. As the miscut angle was changed from -1<SUP>o</SUP> to +1<SUP>o</SUP>, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.
배시영,D.S. Lee,B.H. Kong,H.K. Cho,J.F. Kaeding,S. Nakamura,S.P. DenBaars,J.S. Speck 한국물리학회 2011 Current Applied Physics Vol.11 No.3
(1122) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1° to +1°. While the coexistence of (1122) surface and inclined {1011}surfaces was observed on GaN films on the on-axis m-plane sapphire substrates,{1011}surfaces were dominant on the GaN films on the +1° miscut sapphire substrates. As the miscut angle was changed from -1° to +1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.