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김현식(Hyunsik Kim),정진호(Jinho Jung),이동원(Dong-Won Lee),김준석(Joonseok Kim),이재형(Jaehyung Lee),임석연(Seokyeon Im) 한국자동차공학회 2016 한국자동차공학회 지부 학술대회 논문집 Vol.2016 No.10
Recently, many people begin to increase hobby which pursuit more thrill than comfortable. For example, car offers people to request the thrill and exiting hobby. People who enjoy motor sports have increased. Because some equipments are too expensive, Many people don"t enjoy motor sports. Therefore Team S.E.C-TU made some students who enjoy motor sports to product vehicle. On this year, Our TU7, we designed of vehicle, vehicle production also attempted to do. we especially focused on improving the dynamic performance of vehicle, frame stability and driver comfort. Therefore, Our off-load vehicle ‘TU7’ is well coincident with the purpose of ‘2016 BAJA SAE KOREA at Yeungnam University’.
Velocity Saturation Effects in a Short Channel Si-MOSFET and its Small Signal Characteristics
황상훈,Hyunsik Im,송민규,Koichi Ishida,Toshiro Hiramoto,Takayasu Sakurai 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
We fabricated a Si Metal Oxide Semiconductor Field Effect Transistor with a 0.18 μm gate length and analyzed its transport considering the velocity saturation effect. We found that the saturation current (Idsat) transport shows a fractional power dependence on the gate voltage (Vgs), namely, it follows the α-power law MOSFET model, Idsat = B×(Vgs −VTH)α. The main model parameters α and B were extracted from the measured Idsat−Vgs characteristics. The value of α was around 1.6. The channel length modulation factor (λ) and gate trans-conductance (gm) were investigated as functions of Vgs. We also present the small signal characteristics by using a simple analog amplifier circuit consisting of one transistor and one resistor, demonstrating that a small signal can be well modeled by using the α-power law MOSFET model.
Study on Small Signal Characteristics of Short Channel MOSFETs by Using a-Power Model
Kyooho Jung,Deukyoung Kim,Hyunsik Im,Minkyu Song,Woong Jung 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
We have investigated the transconductances (gm, gds) of MOSFETs consisting of a deepsubmicron short channel, by taking into account channel length modulation and using -power model. Experimental results for gm and gds from short channel MOSFETs are presented, compared with modeled data, and understood in a qualitative way. The modeled results for gm agree with the experimental data, and a new approach to extract L explains the qualitative properties of gds as a function of Vgs and L.
Young S. Park,Hyunsik Im 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.4
The optical properties of self-assembled GaN nanorods and GaN/AlGaN multiquantum discs are investigated by using cathodoluminescence (CL) measurements at room temperature. The nanostructure has a different dimension along the growth direction, leading to different confinement energy states. The dependence of the optical properties on the different confinement energy states along the growth direction is clearly demonstrated using the dependence of the CL image on the photon energy (ECL). The optical properties of self-assembled GaN nanorods and GaN/AlGaN multiquantum discs are investigated by using cathodoluminescence (CL) measurements at room temperature. The nanostructure has a different dimension along the growth direction, leading to different confinement energy states. The dependence of the optical properties on the different confinement energy states along the growth direction is clearly demonstrated using the dependence of the CL image on the photon energy (ECL).
Photosensitivity of bulk and monolayer MoS2-based two-terminal devices
Cho Sangeun,Park Wooyoung,Im Hyunsik,김형상 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.83 No.5
Transition metal dichalcogenides (TMDCs), such as MoS2, MoSe2, WS2, and WSe2, have attracted enormous attention owing to their unique electrical and optical properties. A type of material known as TMDC has the MX2 formula with a direct bandgap in ultra-thin layers and indirect bandgap properties in the bulk. TMDCs have attracted significant research interest due to their use in nano-devices, opto-electronics, and next-generation electronics. In the study, two different MoS2 devices, Au–bulk MoS2–Au and Au–monolayer MoS2–Au, were fabricated, and their photon-induced current–voltage characteristics at different wavelengths (red ≈ 650 nm, green ≈ 532 nm and blue ≈ 450 nm) and values were compared. Additionally, the time-dependent photoresponses of these devices under red light irradiation (wavelength, λex = 650 nm) were analyzed. The Au–monolayer MoS2–Au device had a higher current response compared with the Au–bulk MoS2–Au device. These results suggest that single-layer MoS2 devices could be more efficient and responsive than bulk MoS2 devices for a variety of applications.
Young Ho Do,곽준식,홍진표,Hyunsik Im,Bae Ho Park 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventional rf magnetron sputtering system was investigated by using structural and electrical measurements The Co-doped TiO2 thin films dispaly a rutile phase and a column-like structure. An unusual result, a switching transition from a unipolar to a bipolar behavior, was clearly observed at a high compliance current. The experimental results suggest that the switching transition is related to the formation of trap sites (CoOx, TiO2−x, and Cox-Ti1−x-O2) under large electrical stress conditions. The improved reproducible switching properties of our Co-doped TiO2 materials under forward and reverse bias stresses demonstrate the possibility of future non-volatile memory elements. The resistive switching behavior of 100nmthick Co-doped TiO2 thin films grown by using a conventional rf magnetron sputtering system was investigated by using structural and electrical measurements The Co-doped TiO2 thin films dispaly a rutile phase and a column-like structure. An unusual result, a switching transition from a unipolar to a bipolar behavior, was clearly observed at a high compliance current. The experimental results suggest that the switching transition is related to the formation of trap sites (CoOx, TiO2−x, and Cox-Ti1−x-O2) under large electrical stress conditions. The improved reproducible switching properties of our Co-doped TiO2 materials under forward and reverse bias stresses demonstrate the possibility of future non-volatile memory elements.