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Red Emission from Eu-Implanted GaN
손창식,김성일,Akihiro Wakahara,Hisao Tanoue,최인훈,Mustuo Ogura,Yong Tae Kim,김영환 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D0 !7F2 transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to 5D1 !7F1 and 5D0 !7F1;2;3 transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices.