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Hiroshi Takashima,조명희,Tomoyasu Taniyama,Mitsuru Itoh 한국물리학회 2017 Current Applied Physics Vol.17 No.5
Epitaxial SrTiO3 thin film was grown on 1%-Nb-doped SrTiO3 (001) substrate by pulsed laser deposition (PLD). Post-annealing at 1050 C drastically changes the particle-type surface morphology of the asgrown film to a well-defined step-terrace structure. An atomically smooth surface was obtained with a step height of about 0.4 nm, which corresponds to one-unit-cell of SrTiO3 (a ¼ 0.3905 nm). The dielectric constants εr at 300 and 2 K were found to be 120 and 520 at 100 kHz, respectively. The dielectric losses at 300 and 2 K were 2.0 105 and 1.2 105 at 100 kHz, respectively. Temperature dependence of the dielectric properties showed suppressed quantum paraelectricity. Post-annealed films with an atomically smooth surface used as an insulating layer contribute to the high performance of thinfilm electroluminescent (TFEL) heterostructure devices. Preparation of ideal interfaces of different materials may aid in the development of heterostructure electronic devices.