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A High Speed Fault Simulator for Sequential Circuits with Bidirectional Elements
Kang, M. S.,Shimosakoda, Y.,Iwashita, H.,Shirakawa, I. 대한전자공학회 1991 ICVC : International Conference on VLSI and CAD Vol.2 No.1
A high speed fault simulator is described, which can be applied to sequential circuits containing both uni-and bidirectional CMOS transmission gates. This simulator is distinctive in that it takes advantage of the parallel, deductive, and concurrent simulation schemes, in terms of evaluation of faulty gates, insertion of faults, and propagation of fault lists, respectively. A number of implementation results are also shown, which reveal the efficiency of the simulator especially for CMOS transmission gates.
Characterization of an Intense Laser-Produced Preformed Plasma for Proton Generation
A Sagisaka,A. Noda,A. Fukumi,A. Yogo,A. S. Pirozhkov,H. Daido,K. Nemoto,K. Ogura,M. Nishiuchi,M. Mori,M. Kado,S. Orimo,S. Nakamura,T. Nayuki,T. Shirai,T. Fujii,Y. Oishi,Y. Hayashi,Y. Iwashita,Z. Li 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.I
High-energy protons are generated with a 3-μm-thick tantalum target irradiated with a highintensity laser under the preformed plasma condition. We observe the electron density distributions of preformed plasmas with two-color probe beams as interferometers. The preformed plasma at the front side of the target is generated by pre-pulses of a high-intensity Ti:sapphire laser. In this preformed plasma condition, the maximum proton enegy is 900 keV. The half angle of the generated proton beam (>500 keV) is about 10.