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Choi,Sang Soo,Jeon,Young Jin,Fabrizio,Enzo Di,Grella,L.,Gentili,M.,Chung,Hai Bin,Yoo,Hyung Joun 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
This paper reports on enhancement of alignment accuracy with a novel X-ray mask in mix-and-match process of optical and synchrotron radiation X-ray lithography applied in SOI device fabrication. Optical alignment signals generated from the alignment marks on an X-ray mask and a wafer play an important role in obtaining high alignment accuracy. In this paper, the novel structure of the X-ray mask to improve the alignment signal of the mask and minimize optical interference effect on the SiN membrane is presented. In Karl Suss XRS 200 X-ray stepper, the alignment result of the synchrotron radiation lithography with the novel Xray mask applied to fabricate the SOI devices was σ_x = 0.023 ㎛ and σ_ y = 0.025 ㎛.
X-ray Irradiation Induced Damage in MOS Structures and It's Effect on Oxide Reliability
Kim, Shi Ho,Lee, Ho Jun,Han, Chul Hi,Lee, Kwy Ro,Choi, Sang Soo,Jeon, Young Jin,Fabrizio, Enzo Di,Gentili, Massimo 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
The effects of X-ray induced damage on long-term reliability of MOS structures have been investigated. The gate leakage at low electric field during measurement of Flow-Nordheim tunneling current increases after X-ray irradiation. which is explained by interface trap-assisted tunneling mechanism. This leakage component is completely eliminated by forming gas annealing at 45℃, The long-term reliability of MOS gate oxide, is significantly affected by the residual damages in the oxide every after annealing. In MOS structures, charge to breakdown(Qbd) is reduced about 15% from the unirradiated device. The major mechanisms responsible for reduction of Qbd in irradiated device arc enhanced electron trapping into tile neutral traps and effective thinning of gate oxide by additional defects. Degradation of reliability in irradiated MOS structure limits the applications of X-ray lithography to the devices which required low gate leakage current and high long-term stability sucn as EEPROM's and Flash Memory's.