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Buckling of axial compressed cylindrical shells with stepwise variable thickness
H.G. Fan,Z.P. Chen,W.Z. Feng,F. Zhou,X.L. Shen,G.W. Cao 국제구조공학회 2015 Structural Engineering and Mechanics, An Int'l Jou Vol.54 No.1
This paper focuses on an analytical research on the critical buckling load of cylindrical shells with stepwise variable wall thickness under axial compression. An arctan function is established to describe the thickness variation along the axial direction of this kind of cylindrical shells accurately. By using the methods of separation of variables, small parameter perturbation and Fourier series expansion, analytical formulas of the critical buckling load of cylindrical shells with arbitrary axisymmetric thickness variation under axial compression are derived. The analysis is based on the thin shell theory. Analytic results show that the critical buckling load of the uniform shell with constant thickness obtained from this paper is identical with the classical solution. Two important cases of thickness variation pattern are also investigated with these analytical formulas and the results coincide well with those obtained from other authors. The cylindrical shells with stepwise variable wall thickness, which are widely used in actual engineering, are studied by this method and the analytical formulas of critical buckling load under axial compression are obtained. Furthermore, an example is presented to illustrate the effects of each strake’s length and thickness on the critical buckling load.
Buckling of axial compressed cylindrical shells with stepwise variable thickness
Fan, H.G.,Chen, Z.P.,Feng, W.Z.,Zhou, F.,Shen, X.L.,Cao, G.W. Techno-Press 2015 Structural Engineering and Mechanics, An Int'l Jou Vol.54 No.1
This paper focuses on an analytical research on the critical buckling load of cylindrical shells with stepwise variable wall thickness under axial compression. An arctan function is established to describe the thickness variation along the axial direction of this kind of cylindrical shells accurately. By using the methods of separation of variables, small parameter perturbation and Fourier series expansion, analytical formulas of the critical buckling load of cylindrical shells with arbitrary axisymmetric thickness variation under axial compression are derived. The analysis is based on the thin shell theory. Analytic results show that the critical buckling load of the uniform shell with constant thickness obtained from this paper is identical with the classical solution. Two important cases of thickness variation pattern are also investigated with these analytical formulas and the results coincide well with those obtained from other authors. The cylindrical shells with stepwise variable wall thickness, which are widely used in actual engineering, are studied by this method and the analytical formulas of critical buckling load under axial compression are obtained. Furthermore, an example is presented to illustrate the effects of each strake's length and thickness on the critical buckling load.
ESD Design Strategies for High-Speed Digital and RF Circuits in Deeply Scaled Silicon Technologies
Shuqing Cao,Jung-Hoon Chun,Beebe, S G,Dutton, R W IEEE 2010 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS PART 1 R Vol.57 No.9
<P>Challenges of electrostatic discharge (ESD) protection in deeply scaled silicon technologies are addressed by improving design, characterization, and modeling of I/O MOSFETs, interconnect, ESD protection and power clamp devices. Recent progress on ESD protection design for both high-speed digital I/O and radiofrequency (RF) circuits are presented. Topological trade-offs are compared. High speed circuit protection techniques such as the T-coil based ESD design are reviewed in detail. Package- and wafer-level charged device model (CDM) correlation issues are discussed. I/O, ESD devices, and metal interconnect effects are examined using very fast transmission line pulses (VF-TLP) and TLP.</P>
Design and Characterization of ESD Protection Devices for High-Speed I/O in Advanced SOI Technology
Shuqing Cao,Salman, A.A.,Jung-Hoon Chun,Beebe, S.G.,Pelella, M.M.,Dutton, R.W. IEEE 2010 IEEE transactions on electron devices Vol.57 No.3
<P>This paper focuses on the characterization, modeling, and design of electrostatic discharge (ESD) protection devices such as the gated diode, the bulk substrate diode, and the double-well field-effect diode (DWFED) in 45 nm silicon-on-insulator technology. ESD protection capabilities are investigated using very fast transmission line pulsing tests to predict a device's performance in charged device model (CDM) ESD events. Device capacitance, which is critical for high-speed input/output performance, is evaluated, and biasing schemes and processing techniques are proposed to reduce the parasitic capacitance during normal operating conditions. Technology computer-aided design simulations are used to interpret the physical effects. The implementation of devices for meeting CDM protection requirements is discussed. Evaluation results identify DWFED as a promising candidate for the pad-based local-clamping scheme.</P>