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Investigation of Physicochemical Properties of Mo Carbide Utilizing Electron Spectroscopy
Jeong, Eunkang,Park, Juyun,Kang, Yong-Cheol The Basic Science Institute Chosun University 2020 조선자연과학논문집 Vol.13 No.3
Molybdenum carbide (MoC<sub>x</sub>) thin films (TFs) were deposited by reactive radio frequency (rf) magnetron co-sputtering in high vacuum chamber. We compared the properties of MoC<sub>x</sub> thin films as the rf power changed on C target. The result of alpha step measurement showed that the thickness of the MoC<sub>x</sub> TFs varied from163.3 to 194.86 nm as C power was increased from 160 to 200 W. The crystallinity of MoC<sub>x</sub> such as b-Mo<sub>2</sub>C, Mo<sub>2</sub>C, and diamond like carbon (DLC) structures were observed by XRD. The oxidation states of Mo and C were determined using high resolution XPS spectra of Mo 3d and C 1s were deconvoluted. Molybdenum was consisted of Mo, Mo<sup>4+</sup>, and Mo<sup>6+</sup> species. And C was deconvoluted to C-Mo, C, C-O, and C=O species.
Deposition and XPS Study of Pb, Zr, and Ti Films
Sujin Choi, Juyun Park, Eunkang Jeong, Beob jun Kim, Seo yoon Son, Jeong min Lee, Jin seong Lee, Hee jin Jo, Jihun Park, Yong-Cheol Kang 조선대학교 기초과학연구원 2014 조선자연과학논문집 Vol.7 No.3
Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.
Deposition and XPS Study of Pb, Zr, and Ti Films
Choi, Sujin,Park, Juyun,Jeong, Eunkang,Kim, Beob Jun,Son, Seo Yoon,Lee, Jeong Min,Lee, Jin Seong,Jo, Hee Jin,Park, Jihun,Kang, Yong-Cheol The Basic Science Institute Chosun University 2014 조선자연과학논문집 Vol.7 No.3
Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.