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RISS 인기검색어
- 검색키워드
- 저자 : Deyan He (검색결과 6 건)
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Deyan He,Junshuai Li,Qiang Chen,Xiaoqiang Wang 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
Si thin ¯lms were deposited on Al-coated substrates by inductively coupled plasma chemical vapor deposition with SiH4/H2 mixtures at a low temperature of 350 ±C. The structure of the ¯lms was evaluated by X-ray diraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). XRD spectra indicated that the ¯lms have a highly ordered structure with strong (111) orientation. AFM images showed that the grain size is larger than 150 nm. No residual of Al was detected in the ¯lms by XPS. In view of the high density characteristic of the inductively coupled plasma, a preliminary interpretation was supposed for the mechanism of Al-induced crystallization during low-temperature deposition of Si ¯lm
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Deyan He,Min Yin,Jinxiao Wang,Pingqi Gao,Junshuai Li 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.6
Low-temperature crystalline silicon films were deposited on glass and plastic by using an inductively coupled plasma chemical vapor deposition (ICP-CVD) system. The effects of the deposition parameters on the crystallinity and the preferred crystal orientation of the samples on glass were investigated, and films with adjustable crystallinity and controllable preferred crystal orientation were obtained at a substrate temperature of 350 ˚C. A new approach of aluminum-induced crystallization growth was developed to prepare highly-crystallized Si films at room temperature. A growth mechanism was suggested and demonstrated by the subsequent experimental results. Crystalline Si films with (111)-preferred orientation were deposited on Al-coated polyethylene napthalate at room temperature by optimizing the deposition parameters. The achievement of highly-crystallized Si films could be attributed to the promotion of nucleation in the incubation layer with the assistance of the Al layer. Low-temperature crystalline silicon films were deposited on glass and plastic by using an inductively coupled plasma chemical vapor deposition (ICP-CVD) system. The effects of the deposition parameters on the crystallinity and the preferred crystal orientation of the samples on glass were investigated, and films with adjustable crystallinity and controllable preferred crystal orientation were obtained at a substrate temperature of 350 ˚C. A new approach of aluminum-induced crystallization growth was developed to prepare highly-crystallized Si films at room temperature. A growth mechanism was suggested and demonstrated by the subsequent experimental results. Crystalline Si films with (111)-preferred orientation were deposited on Al-coated polyethylene napthalate at room temperature by optimizing the deposition parameters. The achievement of highly-crystallized Si films could be attributed to the promotion of nucleation in the incubation layer with the assistance of the Al layer.
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Kinetic Monte Carlo Simulation of Nucleation at the Initial Stage of Thin Film Growth
Peifeng Zhang,Deyan He,Xiaoping Zheng 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
Nucleation at the initial stage of thin ¯lm growth has been simulated by using a three-dimensional kinetic Monte Carlo technique. The morphologies of the nucleation were taken by computer-graphic technique. It has been shown that the size of the island nucleation increases with increasing sub- strate temperature. A maximum nucleation density can be obtained for each deposition rate. The temperature Tn at which the nucleation density maximizes is a function of the deposition rate. The nucleation density decreases with decreasing deposition rate at substrate temperatures higher than Tn. A transition from two-dimensional to three-dimensional nucleation was observed at higher substrate temperatures and lower deposition rates.
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Shanglong Peng,Na Feng,Duokai Hu,Deyan He,변창우,이용우,주승기 한국물리학회 2012 Current Applied Physics Vol.12 No.6
Intrinsic and doped polycrystalline silicon thin films were grown by the Ni silicide seeds induced crystallization. The Ni first reacted to Si forming a silicide seeds, then these seeds act as nuclei, from which the grains start to grow laterally. Compared with traditional Ni induced lateral crystallization, polycrystalline silicon thin filmwas grown by Ni silicide induced crystallization with low Ni contamination and large grain sizes. It can be found that the Ni silicide induced crystallization rate is accelerated by p-type doping and is decelerated by n-type doping. And the slightly and strongly phosphorous-doped polycrystalline silicon can be obtained with different grain shapes. Also, the sheet resistance of doped polycrystalline silicon decreases with the increasing of the doping atoms. A reasonable explanation is presented for the dopant effects on the growth rate, microstructure and electronic properties of the samples. Intrinsic and doped polycrystalline silicon thin films were grown by the Ni silicide seeds induced crystallization. The Ni first reacted to Si forming a silicide seeds, then these seeds act as nuclei, from which the grains start to grow laterally. Compared with traditional Ni induced lateral crystallization, polycrystalline silicon thin filmwas grown by Ni silicide induced crystallization with low Ni contamination and large grain sizes. It can be found that the Ni silicide induced crystallization rate is accelerated by p-type doping and is decelerated by n-type doping. And the slightly and strongly phosphorous-doped polycrystalline silicon can be obtained with different grain shapes. Also, the sheet resistance of doped polycrystalline silicon decreases with the increasing of the doping atoms. A reasonable explanation is presented for the dopant effects on the growth rate, microstructure and electronic properties of the samples.
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Deyuan Lyu,Cong Hu,Yuting Jiang,Na Bai,Qi Wang,Deyan He,Jing Qi,Yingtao Li 한국물리학회 2019 Current Applied Physics Vol.19 No.4
The mixture of two-dimensional (2D) TiS2 nanoflakes and polyvinylpyrrolidone (PVP) exhibits a nonvolatile, bipolar resistive switching behavior with a low resistance state (LRS)/high resistance state (HRS) current ratio of ∼102 in the devices with a flexible Al/TiS2-PVP/indium tin oxide (ITO)/polyethylene terephthalate (PET) structure. The polymer-assistant liquid-phase exfoliation of 2D nanoflakes from TiS2 bulk material is processed in low-boiling solvent. And the fabrication process of these devices is performed entirely at room temperature. Such an energy-saving and scalable production process indicates a huge potential of large-scale industrial application. The AFM and TEM characterizations showed that the exfoliated 2D TiS2 are flakes at micrometer scale with a layer-number of mostly 7 or 8. Both the HRS and the LRS can be kept for more than 104 s. The endurance of devices was obtained over 100 direct current (DC) sweeping cycles with remarkable separations between different resistive states. The distributions of writing (set) and erasing (reset) voltages show that set and reset voltages are small (< 2 V). Also, the resistive switching characteristics of the devices are stable during 1000 bending cycles. The switching behavior is explained by the thinning and recovery of Schottky barriers within devices.
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