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Silicon/Pad Pressure Measurements During Chemical Mechanical Polishing
STEVEN DANYLUK,GARY NG,INHO YOON,FRED HIGGS,CHUNHONG ZHOU 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the "soft" pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.
Pressureless-sintering of reaction bonded silicon nitride containing cordierite
박찬,방국수,박동수,김해두,Steven Danyluk 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.3
Reaction bonded silicon nitride (RBSN) has been fabricated from Si powder with cordierite as a sintering aid. A nitridation rate of more than 90% was obtained in each specimen. As the amount of cordierite was increased, the nitridation rates decreased. Both α-Si3N4 and β-Si3N4 were formed during the nitridation of silicon to Si3N4. There were more beta crystals in the specimens with a higher cordierite content. The relative densities increased when the amount of cordierite increased. A Fracture toughness of 3.59±0.28 MPa-m1/2 was obtained for the specimen containing 18 wt% cordierite sintered at 1800 οC for 3 hours.
Dependence of Dishing on Fluid Pressure during Chemical Mechanical Polishing
C. Fred Higgs,Sum Huan Ng,Chunhong Zhou,Inho Yoon,Robert Hight,Zhiping Zhou,LipKong Yap,Steven Danyluk 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Chemical mechanical polishing (CMP) is a manufacturing process that uses controlled wear to planarize dielectric and metallic layers on silicon wafers. CMP experiments revealed that a sub-ambient film pressure developed at the wafer/pad interface. Additionally, dishing occurs in CMP processes when the copper-in-trench lines are removed at a rate higher than the barrier layer. In order to study dishing across a stationary wafer during polishing, dishing maps were created. Since dishing is a function of the total contact pressure resulting from the applied load and the fluid pressure, the hydrodynamic pressure model was refined and used in an existing model to study copper dishing. Density maps, highlighting varying levels of dishing across the wafer face at different radial positions, were developed. This work will present the results.
Dishing and Erosion in Chemical Mechanical Polishing of Electroplated Copper
INHO YOON,SUM HUAN NG,ROBERT HIGHT,CHUNHONG ZHOU,C. FRED HIGGS,LILY YAO,STEVEN DANYLUK 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries; and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.