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Chuanxin Hu,Zhiyong Zhou,Baosong Jiang 한국풍공학회 2019 Wind and Structures, An International Journal (WAS Vol.28 No.4
Aerodynamic configurations of bridge decks have significant effects on the aerostatic torsional divergence and flutter for super long-span bridges, which are onset for selection of suitable bridge decks for those bridges. Based on a cable-stayed bridge with double main spans of 1500 m, considering typical twin-box, stiffening truss and closed-box section, which are the most commonly used form of bridge decks and assumed that the rigidity of those section is completely equivalent, are utilized to investigate the effects of aerodynamic configurations of bridge decks on aerodynamic instability performance comprised of the aerostatic torsional divergence and flutter, by means of wind tunnel tests and numerical calculations, including three-dimensional (3D) multimode flutter analysis and nonlinear aerostatic analysis. Regarding the aerostatic torsional divergence, the results obtained in this study show twin-box section is the best, closed-box section the second-best, and the stiffening truss section the worst. Regarding the flutter, the flutter stability of the twin-box section is far better than that of the stiffening truss and closed-box section. Furthermore, wind-resistance design depends on the torsional divergence for the twin-box and stiffening truss section. However, there are obvious competitive relationships between the aerostatic torsional divergence and flutter for the closed-box section. Flutter occur before aerostatic instability at initial attack angle of +3°and 0°, while the aerostatic torsional divergence occur before flutter at initial attack angle of −3°. The twin-box section is the best in terms of both aerostatic and flutter stability among those bridge decks. Then mechanisms of aerostatic torsional divergence are revealed by tracking the cable forces synchronous with deformation of the bridge decks in the instability process. It was also found that the onset wind velocities of these bridge decks are very similar at attack angle of −3°. This indicates that a stable triangular structure made up of the cable planes, the tower, and the bridge deck greatly improves the aerostatic stability of the structure, while the aerodynamic effects associated with the aerodynamic configurations of the bridge decks have little effects on the aerostatic stability at initial attack angle of −3°. In addition, instability patterns of the bridge depend on both the initial attack angles and aerodynamic configurations of the bridge decks. This study is helpful in determining bridge decks for super long-span bridges in future.
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Jun Li,Chuanxin Huang,Yi-Zhou Fu,Jianhua Zhang,Xue-Yin Jiang,Zhi-Lin Zhang 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1
Amorphous LaZnSnO thin films with different La doping concentrationare prepared by a combustion solution process and theelectrical performances of thin film transistors (TFTs) areinvestigated. The influence of La content on the structure, oxygenvacancies, optical and electrical performance of LaZnSnO thinfilms are investigated. At an appropriate amount of La doping(15 mol.%), LaZnSnO-TFT shows a superior electrical performanceincluding a mobility of 4.2 cm2/V s, a subthreshold swing of 0.50 V/decade and an on/off current ratio of 1.9 × 107. The highperformance LaZnSnO-TFT is attributed to the better interfacebetween SiO2 and LaZnSnO channel layer and the suppression ofoxygen vacancies by optimizing La content. It suggests that Ladoping can be a useful technique for fabricating high performancesolution-processed oxide TFTs.
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Ting Xia,Jin Zhang,Chuanxin Zhou,Yu Li,Wenhui Duan,Bo Zhang,Min Wang,Jianpei Fang 고려인삼학회 2020 Journal of Ginseng Research Vol.44 No.5
Background: T-cell acute lymphoblastic leukemia (T-ALL) is a kind of aggressive hematological cancer, and the PI3K/Akt/mTOR signaling pathway is activated in most patients with T-ALL and responsible for poor prognosis. 20(S)-Ginsenoside Rh2 (20(S)-GRh2) is a major active compound extracted from ginseng, which exhibits anti-cancer effects. However, the underlying anticancer mechanisms of 20(S)-GRh2 targeting the PI3K/Akt/mTOR pathway in T-ALL have not been explored. Methods: Cell growth and cell cycle were determined to investigate the effect of 20(S)-GRh2 on ALL cells. PI3K/Akt/mTOR pathway-related proteins were detected in 20(S)-GRh2-treated Jurkat cells by immunoblotting. Antitumor effect of 20(S)-GRh2 against T-ALL was investigated in xenograft mice. The mechanisms of 20(S)-GRh2 against T-ALL were examined by cell proliferation, apoptosis, and autophagy. Results: In the present study, the results showed that 20(S)-GRh2 decreased cell growth and arrested cell cycle at the G1 phase in ALL cells. 20(S)-GRh2 induced apoptosis through enhancing reactive oxygen species generation and upregulating apoptosis-related proteins. 20(S)-GRh2 significantly elevated the levels of pEGFP-LC3 and autophagy-related proteins in Jurkat cells. Furthermore, the PI3K/Akt/mTOR signaling pathway was effectively blocked by 20(S)-GRh2. 20(S)-GRh2 suppressed cell proliferation and promoted apoptosis and autophagy by suppressing the PI3K/Akt/mTOR pathway in Jurkat cells. Finally, 20(S)-GRh2 alleviated symptoms of leukemia and reduced the number of white blood cells and CD3 staining in the spleen of xenograft mice, indicating antitumor effects against T-ALL in vivo. Conclusion: These findings indicate that 20(S)-GRh2 exhibits beneficial effects against T-ALL through the PI3K/Akt/mTOR pathway and could be a natural product of novel target for T-ALL therapy.
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Jun Li,You-Hang Zhou,De-Yao Zhong,Chuanxin Huang,Jian Huang,Jianhua Zhang 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
In this work, the high κ Zr x Al 1−x O y fi lms with a diff erent Zr concentration have been deposited by atomic layer deposition,and the eff ect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric propertiesof Zr x Al 1−x O y fi lms is analyzed by Atomic force microscopy, X-ray diff raction, X-ray photoelectron spectroscopy andcapacitance-frequency measurement. The eff ect of Zr concentrations of Zr x Al 1-x O y gate insulator on the electrical propertyand stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is fi rstlyinvestigated. Under NBIS and TS, the much better stability of ZTO TFTs with Zr x Al 1−x O y fi lm as a gate insulator is due tothe suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeationat the ZTO/Zr x Al 1−x O y interface. It provides a new strategy to fabricate the low consumption and high stability ZTOTFTs for application.
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