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Lee, Cheul-Ro,Lee, In-Hwan,Lee, Oh-Yeon,Choi, Dae-Kyu,Jang, Seong-Hwan 전북대학교 공학연구원 ( 구 전북대학교 공업기술연구소 ) 2002 工學硏究 Vol.33 No.-
The characteristics of GaN/Si(111) epitaxial layers grown by MOVPE with Al_xGa_(1-x)N/AlN composite buffer layer(CBL) which are various x ranging from 0.07 to 0.15 in AlxGa_(1-x)N are investigated. The x values of Al_xGa_(1-x)N grown with various TMG flow rates as feeding TMA constantly are determined by TCXRD. The surface images of GaN/Si(111) epitaxy observed by SEM show the some cracks, which are due to thermal mismatch between GaN and Si. According to DCXRD rocking curves of GaN(0002), the crystal quality of GaN/Si(111) grown on Al_0.11Ga_0.89N/AlN CBL exhibits the best result with FWHM of 886 arcsec. PL spectrum at RT of the GaN/Si(111) epitaxy grown on the CBL shows a sharp band edge emission peak at 365 ㎚ with average FWHM of 45 meV, which is compared with the best result achieved so far for GaN/Si. Therefore, it can be concluded that the AlxGa_(1-x)N/AlN CBL having suitable Al molfraction of AlxGa(1-x)N layer plays an important role for improving the quality of GaN/Si(111) epitaxy by reducing the lattice and thermal mismatch between GaN and Si(111).
Lee, You Kee,Lee, Cheul Ro,Lee, Young Ki,Kim, Jung Yuel,Lee, Min Sang,Park, Dong Koo 대한금속재료학회(대한금속학회) 2001 METALS AND MATERIALS International Vol.7 No.4
In order to investigate the effects of vacuum annealing on the properties of titanium boride films (TiBx) on a (100)Si substrate, TiBX/Si samples were prepared by the co-evaporation process and then annealed in the temperature range of 300∼1000℃. The interfacial reaction of TiB_x/Si systems and the thermal stability of non-stoichiometric TiB_x films (0≤/Ti≤2.5) were investigated by means of sheet resistance, x-ray diffraction, transmission electron microscopy, x-ray photo-electron spectroscopy, and stress measurement. For TiB_x samples with a ratio of B/Ti≥2.0, an apparent structural change is not observed even after annealing at 1000℃ for 1 h. For samples with the ratio of BITi$lt;2.0, however, there are two competitive solid phase reactions: the formation of a titanium silicide layer at the interface and the formation of a stoichiometric TiB₂ layer at the surface, indicating the salicide (self-aligned silicide) process. The sheet resistance and the film stress in the Ti/Si and TiBX/Si systems are explained well by the solid phase reactions.
CRYSTALLINITY OF GaN EPILAYERS ON GaN BUFFER GROWN BY MOCVD
Lee, Cheul-Ro,Lee, In-hwan,Choi, In-hoon,Son, Sung-jin,Noh, Sam-kyu 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e4
GaN epilayers have been grown on the GaN nucleation layers grwon as the flow rate of TMG decreases by metal organic chemical vapour deposition(MOCVD). The size of GaN droplets including amphorous state became fine as the flow rate of TMG(10.0, 8.0, 6.0, 4.0 SCCM respectively) decreases during growing the nucleation layers for the same thickness. The surface morphology and crystallinity of the epilayers characterized by FWHM of DCX are depend on the TMG flow rate during for the GaN nucleation layers. The GaN epilayers grwon on the nucleation layer with 8.0 SCCM exhibits the best crystallinity.
Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots
Lee, Kwang Jae,Jo, Byounggu,Lee, Cheul-Ro,Lee, In-Hwan,Kim, Jin Soo,Oh, Dae Kon,Kim, Jong Su,Lee, Sang Jun,Noh, Sam Kyu,Leem, Jae-Young,Ryu, Mee-Yi American Institute of Physics 2011 JOURNAL OF APPLIED PHYSICS - Vol.109 No.11
Quinolone Alkaloids from Evodiae Fructus and Their Inhibitory Effects on Monoamine Oxidase
Han, Xiang-Hua,Hong, Seong-Su,Lee, Dong-Ho,Lee, Jung-Joon,Lee, Moon-Soon,Moon, Dong-Cheul,Han, Kun,Oh, Ki-Wan,Lee, Myung-Koo,Ro, Jai-Seup,Hwang, Bang-Yeon 대한약학회 2007 Archives of Pharmacal Research Vol.30 No.4
1-Methyl-2-undecyl-4(1H)-quinolone (1) was previously isolated as a selective MAO-B inhibitor from the Evodiae Fructus. Further bioassay-guided purification led to the identification of five known quinolone alkaloids, 1 -methyl-2-nonyl-4(1H)-quinolone (2), 1-methyl-2-[(Z)-6-unde-cenyl]-4(1 H)-quinolone (3), evocarpine (4), 1-methyl-2-[(6Z,9Z)-6,9-pentadecadienyl]-4(1H)-quinolone (5), and dihydroevocarpine (6). All the isolates showed more potent inhibitory effects against MAO-B compared to MAO-A. The most MAO-B selective compound 5 among the isolates inhibited MAO-B in a competitive manner, according to kinetic analyses by Lineweaver-Burk reciprocal plots.