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High-Resolution Capacitive Microinclinometer With Oblique Comb Electrodes Using (110) Silicon
Dae-Hun Jeong,Sung-Sik Yun,Byung-Geun Lee,Myung-Lae Lee,Chang-Auk Choi,Jong-Hyun Lee IEEE 2011 Journal of microelectromechanical systems Vol.20 No.6
<P>We propose a new capacitive microinclinometer where oblique comb electrodes and double-folded suspension springs are aligned parallel to the vertical (111) plane of (110) silicon. The oblique comb utilizes both the overlapped area and the gap between movable and stationary electrodes, resulting in a considerable increase in sensitivity (capacitance change/angle). The resolution becomes even higher by taking advantage of the smooth (111) sidewalls of the oblique comb electrodes, which are fabricated using silicon deep reactive ion etching followed by crystalline wet etching. The surface roughness was reduced from 200 (R<SUB>rms</SUB>) to 20 nm (R<SUB>rms</SUB>), and the verticality was improved from 88.7° to 89.7°. The capacitance change of the fabricated inclinometer experimentally ranges from -0.793 to 0.783 pF for the full range of inclination angle (from -90° to 90°). The estimated worst resolution, which is obtainable at an inclination angle of ±85°, was as low as 0.25°.</P>
Yun, Sung-Sik,Jeong, Dae-Hun,Wang, Se-Myung,Je, Chang-Han,Lee, Myung-Lae,Hwang, Gunn,Choi, Chang-Auk,Lee, Jong-Hyun IOP 2009 JOURNAL OF MICROMECHANICS AND MICROENGINEERING - Vol.19 No.3
<P>This paper presents a novel fabrication method of scalloping-free and footing-free vertical electrodes for micromachined capacitive inclinometers with a high sensing resolution. The proposed fabrication method is based on additional crystalline wet etching of a (1 1 0) silicon that is bonded to a silicon substrate with a patterned insulator layer. The sensing electrodes, which are aligned to the (1 1 1) plane, have very smooth sidewalls because the morphological defects formed by the silicon deep reactive ion etching (DRIE) process are drastically reduced in the crystalline wet etching. The fabricated capacitive inclinometer with smooth sensing electrodes was evaluated in terms of capacitance change and resolution. The capacitance of the fabricated inclinometer is changed from −0.246 to 0.258 pF for the inclination angle (−90° to 90°). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to a high resolution of 0.1° or less for ±45°.</P>
이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성
최창억,이용봉,김정호,Choi, Chang-Auk,Lee, Yong-Bong,Kim, Jeong-Ho 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.1
As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.
고종수(Jong Soo Ko),이대식(Dae-Sik Lee),이명래(Myung Lae Lee),최창억(Chang Auk Choi),김윤태(Youn Tae Kim) 대한기계학회 2002 대한기계학회 춘추학술대회 Vol.2002 No.5
A laterally driven electromagnetic microactuator (LaDEM) is introduced, and a micro-optical switch is<br/> designed and fabricated as an application. LaDEM offers parallel movement of the microactuator to the<br/> silicon substrate surface (in-plane mode). Poly-silicon-on-insulator (poly-SOI) wafers and a reactive ion<br/> etching (RIE) process were used to fabricate high-aspect-ratio vertical microstructures, which allowed the<br/> equipping of vertical micro-mirrors. A fabricated single leaf spring had a width of 1.2 mm, thickness of 16 mm,<br/> and length of 800 mm. The resistance of the fabricated leaf spring for the optical switch was 5 W. The<br/> deflection of the leaf spring started to profoundly increase at about 400 mA, and it showed snap-through<br/> phenomenon over that current value. Owing to the snap-though phenomenon, a large deflection of 60 mm was<br/> detected at 566 mA.