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Power Electronic Materials Research to Enable Next Generation GaN Power Switches
Charles R. “Chip” Eddy,N. Nepal,V.R. Anderson,C.R. English,N.Y. Garces,V.D. Wheeler,B.N. Feigelson,J.D. Greenlee,M.J. Tadjer,A.D. Koehler,T.J. Anderson,T.I. Feygelson,B.B. Pate,M.A. Mastro,F.J. Kub,K. 한국진공학회 2017 한국진공학회 학술발표회초록집 Vol.2017 No.8
Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method
Mastro, M.A.,Freitas, J.A.,Eddy, C.R.,Kub, F.,Ahn, J.,Kim, H.Y.,Kim, J. North-Holland 2009 Physica E, Low-dimensional systems & nanostructure Vol.41 No.3
A simple solution growth process was employed to deposit ZnO nanowires on glass slides. The batch process was scaled from one to multiple glass slides with no apparent scaling limit observed. Strong green emission, distinctive of the ZnO surface luminescence, was measured and visualized in individual nanowires. This technique can be used to grow high-quality ZnO nanowires on any substrate.
Rechargeable zinc oxide / carbon nano-structures
M. A. Mastro,M. J. Tadjer,F. J. Kub,K. D. Hobart,C. R. Eddy, Jr,김지현,M.R. Papantonakis 한양대학교 세라믹연구소 2010 Journal of Ceramic Processing Research Vol.11 No.1
A simple solution growth process was employed to deposit ZnO nanowires on carbon nanotubes and nano-structured carbon paper. Vertical ZnO nanowires formed on the carbon paper with a hexagonal orientation. On the carbon nanotubes, the ZnO nanowires and platelets integrated as an agglomerated sphere. Electric charge flow was measured in both structures upon probe contact, and would decay over several hours. A mechanical perturbation was found to recharge the structure, which was attributed to the piezoelectric ZnO nanowires. Continuous as well as intermittent vibration coupled with an electrochemical storage mechanism to create a perpetual current source.
Evolution of strain throughout gallium nitride deposited on silicon carbide
김지현,M.A. Mastro,N.D. Bassim,J.A. Freitas Jr.,M.E. Twigg,C.R. Eddy Jr.,D.K. Gaskill,R.L. Henry,R.T. Holm,P.G. Neudeck,A.J. Trunek,J.A. Powell 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.5
During GaN growth on an on-axis SiC substrate, a large density of dislocations (~109 cm−2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires
Mastro, M. A.,Hong-Youl Kim,Jaehui Ahn,Simpkins, B.,Pehrsson, P.,Jihyun Kim,Hite, J. K.,Eddy, C. R. IEEE 2011 IEEE transactions on electron devices Vol.58 No.10
<P>An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {- 110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.</P>