RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        Selective ethanol gas sensing behavior of mesoporous n-type semiconducting FeNbO4 nanopowder obtained by niobiumecitrate process

        C. Balamurugan,A.R. Maheswari,D.W. Lee,A. Subramania 한국물리학회 2014 Current Applied Physics Vol.14 No.3

        Beyond the most investigated mesoporous silica and carbon based materials, metal oxides have attracted considerable interest due to their more diverse electronic functionality, which includes gas sensing activities, semiconductor characteristics and magnetic properties. In this paper, we describe the fabrication, characterization and application of mesoporous FeNbO4 nanopowder for ethanol gas sensing application. FeNbO4 nanopowder was synthesized via the niobiumecitrate complex method, without using any surfactant and size selection medium. Thermal stability and structure of the nanopowder was analyzed by thermogravimetric analysis (TG/DTA) and X-ray diffraction analysis (XRD). Structural analysis confirmed the formation of FeNbO4 with monoclinic structure. The particle size, electrical and optical properties were also systemically investigated by means of transmission electron microscopy (TEM), impedance and diffused reflectance spectra. Nitrogen adsorption isotherms of the FeNbO4 were type IV with hysteresis loops of type H3 indicating well-defined pore structure with mesoporous nature. The sensing characteristics of FeNbO4 nanopowder such as sensitivity, operating temperature and response time, were studied in the presence of ethanol (C2H5OH). Experimental result confirmed that a higher response to ethanol at relatively lower operating temperature of 200 C.

      • KCI등재SCIESCOPUS

        Selective ethanol gas sensing behavior of mesoporous n-type semiconducting FeNbO<sub>4</sub> nanopowder obtained by niobium-citrate process

        Balamurugan, C.,Maheswari, A.R.,Lee, D.W.,Subramania, A. Elsevier 2014 Current Applied Physics Vol.14 No.3

        Beyond the most investigated mesoporous silica and carbon based materials, metal oxides have attracted considerable interest due to their more diverse electronic functionality, which includes gas sensing activities, semiconductor characteristics and magnetic properties. In this paper, we describe the fabrication, characterization and application of mesoporous FeNbO<SUB>4</SUB> nanopowder for ethanol gas sensing application. FeNbO<SUB>4</SUB> nanopowder was synthesized via the niobium-citrate complex method, without using any surfactant and size selection medium. Thermal stability and structure of the nanopowder was analyzed by thermogravimetric analysis (TG/DTA) and X-ray diffraction analysis (XRD). Structural analysis confirmed the formation of FeNbO<SUB>4</SUB> with monoclinic structure. The particle size, electrical and optical properties were also systemically investigated by means of transmission electron microscopy (TEM), impedance and diffused reflectance spectra. Nitrogen adsorption isotherms of the FeNbO<SUB>4</SUB> were type IV with hysteresis loops of type H<SUB>3</SUB> indicating well-defined pore structure with mesoporous nature. The sensing characteristics of FeNbO<SUB>4</SUB> nanopowder such as sensitivity, operating temperature and response time, were studied in the presence of ethanol (C<SUB>2</SUB>H<SUB>5</SUB>OH). Experimental result confirmed that a higher response to ethanol at relatively lower operating temperature of 200 <SUP>o</SUP>C.

      • Investigations on Z-Source Based Cascaded Five Level Inverter

        K. Vijayalakshmi,C. R. Balamurugan 보안공학연구지원센터 2016 International Journal of Signal Processing, Image Vol.9 No.12

        The Z source inverter is a novel power conversion topology that can buck and boost the given input voltage. Voltage source inverter (VSI) and current source inverter (CSI) have some common problems. The proposed work eliminates the limitations of both voltage source inverter and current source inverter by replacing multilevel inverter. This paper presents the new inverter topology based on combination of Z Source Inverter (ZSI) and Multi Level Inverter (MLI). The Z source inverter employs a unique impedance network to couple the main circuit to the power source. The basic structure includes one DC voltage source, Z network and multilevel inverter. Thus providing unique features that cannot be provided in both traditional voltage source and current source inverter. The cascaded MLI composed of eight switches to generating five voltage levels. The presence of multilevel inverters provide high output voltages with low harmonics without the use of transformers. The Z source concept can be applied to ac-dc, dc-ac, ac-ac and dc-dc power conversions. This work observes the rms (Root Mean Square) output voltage and presence of THD (Total Harmonic Distortion) in the output waveform by simulating the Z source based multilevel inverter using MATLAB/simulink.

      • SCIESCOPUSKCI등재

        A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET

        Dhanaselvam, P. Suveetha,Balamurugan, N.B.,Chakaravarthi, G.C. Vivek,Ramesh, R.P.,Kumar, B.R. Sathish The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.4

        In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.

      • Design and Analysis of Automatic Insulin Delivery System Using Pic Microcontroller

        P. Kayalvizhi,S. Balamurugan,C.Ramachandradurai,R. Rakesh 보안공학연구지원센터 2016 International Journal of Bio-Science and Bio-Techn Vol.8 No.3

        In our country millions of peoples are affected by diabetes. In future, this range will get increased as said by the World Health Organization (WHO). Diabetes is a chronic disease and has the high risk of heart attack, stroke and in later stages cause blindness, kidney failure. This is mainly associated with insulin production and its action. Hence to recover the diabetic patients from these risks, insulin must be given periodically to the persons. Nowadays insulin is given to the diabetic patients by injector, inhaler or by syringes. This is not a precise method to sustain our blood glucose level. So to manage the problems related with this complex disease, automatic insulin pump provides the better blood glucose level maintained by injecting the insulin at regular intervals. This insulin pump supply distinctly limited dosage of insulin to diabetic persons who require multiple injections daily to maintain their glucose level in blood. This system automatically provides insulin at predefined times regularly, so that they keep control of blood glucose level.

      • Assessment of Single Phase Cascaded Multilevel Inverter using Equal and Unequal Amplitude Carriers

        P. Sureshpandiarajan,S. P. Natarajan,C. R. Balamurugan,R. Bensraj 보안공학연구지원센터 2015 International Journal of Signal Processing, Image Vol.8 No.5

        This work presents the comparison of various multicarrier based Pulse Width Modulation (PWM) techniques for the chosen single phase CMLI (Cascaded Multi Level Inverter). In this paper, a single phase symmetrical cascaded multilevel inverter is controlled with sinusoidal, THI (Third Harmonic Injection), Trapezoidal, TAR (Trapezoidal Amalgamated Reference) and Stepped Wave reference with Equal Amplitude Carriers (EAC) and UEAC (Un Equal Amplitude Carriers). The proposed EAC and UEAC are applied for various PWM strategies. The PWM methods used for the analysis are PD (Phase Disposition) PWM, POD (Phase Opposition and Disposition) PWM, APOD (Alternative Phase Opposition and Disposition) PWM, CO (Carrier Overlapping) PWM, PS (Phase Shift) PWM and VF (Variable Frequency) PWM with EAC and UEAC. For all the PWM methods and references the UEAC produces less THD and higher fundamental RMS (Root Mean Square) values except for ma =1. For ma =1 the EAC provides less THD (Total Harmonic Distortion) and higher fundamental RMS (Root Mean Square) values for all the PWM methods and references. To validate the developed technique, simulations are carried out through MATLAB/SIMULINK.

      • KCI등재

        A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET

        P. Suveetha Dhanaselvam,N. B. Balamurugan,G. C. Vivek Chakaravarthi,R. P. Ramesh,B. R. Sathish Kumar 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.4

        In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼