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A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET
P. Suveetha Dhanaselvam,N. B. Balamurugan,G. C. Vivek Chakaravarthi,R. P. Ramesh,B. R. Sathish Kumar 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.4
In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET
Dhanaselvam, P. Suveetha,Balamurugan, N.B.,Chakaravarthi, G.C. Vivek,Ramesh, R.P.,Kumar, B.R. Sathish The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.4
In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.