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c - 축 배양된 PLT 박막의 특성 및 IR 센서 응용
최병진,박재현,김영진,김기완 ( B . J . Choi,J . H . Park,Y . j . Kim,K . W . Kim ) 한국센서학회 1996 센서학회지 Vol.5 No.3
The PLT thin films on (100) cleaved b4g0 single crystal substrate have been fabricated by rf magnetron sputtering using a Pb0-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of Ar/O₂, and rf power density were 640℃, 10 mTorr. 10 sccm, and 1.7 W/㎠, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of 8X10^(11)Ω·cm, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450mV and signal to noise ratio of 7.2.
고주파 마그네트론 스펏터링법으로 제조한 PLT 박막의 특성
최병진,박재현,김영진,최시영,김기완 ( B. J . Choi,J . H . Park,Y . j . Kim,S . Y . Choi,K . W . Kim ) 한국센서학회 1995 센서학회지 Vol.4 No.3
The PLT thin films on MgO substrate have been fabricated by RF magnetron sputtering and the dependence of properties on fabrication conditions have been studied. The PbO-rich target was used and the optimum fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, Ar/O₂ ratio, and rf payer was 640℃, 10 mTorr, 10 1, and 1.7 W/㎠, repectively. In these conditions, the PLT thin film showed the deposition rate of 62.5Å/min, the Pb/Ti ratio of 1/2, and the dielectric constant of 200. The FLT thin film showed good c-axis orientation and crystalinity acording to XRD and SEM analysis.