An Eco Friendly Formula for Batik Textiles

( Nazlina Shaari ),( Khairul Aidil Azlin A. Rahman ) 한국산업디자이너협회(한국인더스트리얼디자인학회) 2009 산업디자인학연구 Vol.3 No.4

Batik is one of the world's oldest living crafts and art forms. It has survived so long, adapting and evolving along the way, and still is made in many parts of the world by both traditional and contemporary means suggests it has some wisdom to yield about sustainability. Batik as an everyday item and marker of identity were highly reflecting the Malay culture in the world. Batik represents it multiplicity in use, commodity and gift as well as dominant product of identity. On the other hand, batik usages are the main element for social business. It is also recognized as an art and manners that are favored by each social group that involved with the element sharing of knowledge and values by the society. This knowledge will enhance the development of culture values in representing sustainable identity within the society. It is widely realized that technology has a wide spectrum impact that imposed traditional batik towards modernity. As far as batik represents our culture, sustainability in batik production leads better futures for the batik industries. This paper will discuss on sustainable batik design through environmental concern and its presentation. A wide spectrum impact of batik has shifted form traditional values to modern one comprising eco-friendly formula in batik making process. It is expected that this will create significant impact to the future of batik business.

Investigation of excitonic states effects on optoelectronic properties of Sb2Se3 crystal for broadband photo-detector by highly accurate first-principles approach

Abdullahi Lawal,A. Shaari,R. Ahmed,L.S. Taura 한국물리학회 2018 Current Applied Physics Vol.18 No.5

The rapid demand of photodetector is increasing day by day due to its versatility of applications that affect our lives. However, it is still very challenging to produce low-cost high-performance broadband photo-detector that can detect light from near infrared to the ultraviolet frequency range for medical diagnosis and visible light communication applications. Regarding this, low-cost antimony selenide (Sb2Se3), with direct energy gap and strong light absorption over a wider range from near infrared to ultraviolet frequency, is considered a promising candidate material for such kind of applications. Therefore, to expose its hidden potential, detailed analysis of its structural, electronic and optical properties is very essential. To accomplish this purpose, different schemes of the first-principles calculations are used in this study. Structural properties of Sb2Se3 are calculated by first-principles methods realized within density functional theory (DFT) framework. Whereas, to compute the quasiparticle (QP) band structure, excitonic and optical properties, many-body perturbation theory (MBPT) based on oneshot GW (G0W0) and Bethe-Salpeter equation (G0W0-BSE) approaches are used. Our DFT calculations show that Wu-Cohen GGA (WC-GGA) reproduces lattice parameters of Sb2Se3 material consistent with the experimental measurements. Similarly, G0W0 calculations confirm the Sb2Se3 a direct bandgap energy material of 1.32 eV and show good agreement with the experimental results. Similarly, the results on the optical properties of Sb2Se3 with the inclusion of electron-hole interaction show that the exciton energy of the material is 1.28eV while its corresponding plasma energy is 10.86 eV. These values show that the investigated material can absorb photons from near infrared to ultraviolet wavelengths. It is, therefore, anticipated that this material will be useful for new-generation optoelectronic applications from near infrared to ultraviolet wavelengths.

Engineering of highly mismatched alloy with semiconductor and semi-metallic substituent's for photovoltaic applications

Bakhtiar Ul Haq,R. Ahmed,Mazmira Mohamad,A. Shaari,이주열,S. AlFaify,Mohammed Benali Kanoun,Souraya Goumri-Said 한국물리학회 2017 Current Applied Physics Vol.17 No.2

Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because of holding competence of rapid change in physical properties with minor compositional change and consequently showing their potential for solar energy and photovoltaic applications. In the present density functional theory based work, we design HMAs from the extremely dissimilar GaP (semiconductor) and GaBi (semimetal). The alloying of the two compounds with unmatched electronic characteristics has triggered a rapid reduction in the energy gap of GaPBi. The energy gap is reduced by 39.3 meV for every 1% increase in Bi composition. The semiconductor behavior of GaPBi based HMAs is found to be transformed to semimetallic for replacing 64.6% of P atoms by Bi. Unlike the conventional alloys, the variation in the electronic energy gap of GaP1-xBix shows deviation from the Vegard's formalism. Where the optical properties are strongly influenced with the narrowing energy gap of GaPBi. For the Bi-rich GaPBi, the notable red shift is observed in optical dielectric function and absorption spectra. Moreover, the larger atomic size of Bi has enhanced the lattice parameters of Bi-rich GaPBi. The GaPBi based HMAs with tunable energy gap in the span of 2.51 eVe0 eV and the interesting optical properties highlight them prospective materials for optoelectronic applications.

Engineering of highly mismatched alloy with semiconductor and semi-metallic substituent's for photovoltaic applications

Haq, Bakhtiar Ul,Ahmed, R.,Mohamad, Mazmira,Shaari, A.,Rhee, JooYull,AlFaify, S.,Kanoun, Mohammed Benali,Goumri-Said, Souraya ELSEVIER 2017 Current Applied Physics Vol.17 No.2

<P>Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because of holding competence of rapid change in physical properties with minor compositional change and consequently showing their potential for solar energy and photovoltaic applications. In the present density functional theory based work, we design HMAs from the extremely dissimilar GaP (semiconductor) and GaBi (semi metal). The alloying of the two compounds with unmatched electronic characteristics has triggered a rapid reduction in the energy gap of GaPBi. The energy gap is reduced by 39.3 meV for every 1% increase in Bi composition. The semiconductor behavior of GaPBi based HMAs is found to be transformed to semi metallic for replacing 64.6% of P atoms by Bi. Unlike the conventional alloys, the variation in the electronic energy gap of GaP1-xBix shows deviation from the Vegard's formalism. Where the optical properties are strongly influenced with the narrowing energy gap of GaPBi. For the Bi-rich GaPBi, the notable red shift is observed in optical dielectric function and absorption spectra. Moreover, the larger atomic size of Bi has enhanced the lattice parameters of Bi-rich GaPBi. The GaPBi based HMAs with tunable energy gap in the span of 2.51 eV-0 eV and the interesting optical properties highlight them prospective materials for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.</P>

Composition-induced influence on the electronic band structure, optical and thermoelectric coefficients of the highly mismatched GaNSb alloy over the entire range: A DFT analysis

Ul Haq, Bakhtiar,Ahmed, R.,Rhee, Joo Yull,Shaari, A.,AlFaify, S.,Ahmed, M. Elsevier 2017 Journal of alloys and compounds Vol.693 No.-

<P><B>Abstract</B></P> <P>Capable of achieving wide control over energy band gap and following optoelectronic properties; the highly mismatched alloys (HMAs) are considered to be promising materials for solar energy conversion devices. The dramatic restructuring of energy bands and density of states in HMAs caused by the replacement of anions with distinctly-mismatched isovalent constituents could further be an important course in improving their thermoelectric efficiency. In this paper, we attempt to explore and address the composition-induced modifications in the electronic band structure and the resultant effects on optical spectra and thermoelectric coefficients of GaN<SUB>1−x</SUB>Sb<SUB>x</SUB> based HMAs in the framework of density functional theory. We observe, the substitution of N by Sb, considerably affects its band structure and split the conduction band minimum (CBM) into sub-bands. With increasing Sb composition, the lowest sub-band stemmed from N-s electrons has experienced drastic downward shift leading to energy gap narrowing. Interestingly, the energy gap narrowing along R- Γ is found to be faster than that of Γ- Γ point leading to an amazing direct to indirect band gap crossover. On the other hand, the composition-induced energy gap narrowing stimulates the red-shift in fundamental absorption edge in both ultraviolet and the infrared regime, making the GaNSb potentially useful material for photovoltaic applications. In addition, substantial effect on the thermoelectric coefficients of GaNSb is also observed via Sb substitution. We obtain larger Seebeck coefficient, improved power factors and figure of merit (ZT) for GaNSb at low Sb substitution and found diminishing effect with the further increase of Sb composition. With enhanced Seebeck coefficient, power factor and ZT values at modest doping levels, GaNSb alloy could be a promising candidate for near or above room temperature thermoelectric applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Alloying of GaNSb across entire composition in the framework of DFT. </LI> <LI> The striking direct to indirect energy gap cross over. </LI> <LI> Enhanced absorption in ultraviolet, visible and infrared energy regime. </LI> <LI> Comprehensive investigations of thermoelectric properties of GaNSb alloy. </LI> </UL> </P>

Cuneifolin, a New Xanthone from Garcinia cuneifolia (Guttiferae)

G.C.L.Ee,K.H.Phong,X.H.Mong,K.Shaari,M.A.Sukari 한국생약학회 2003 Natural Product Sciences Vol.9 No.3