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MEMS 공정을 위한 여러 종류의 산화막의 잔류응력 제거 공정
李相佑,김성운,李尙禹,김종팔,박상준,이상철,조동일 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
Various oxide films are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). Large residual strain of these oxide films cause the wafer to bow, which can have detrimental effects on photolithography and other ensuing processes. This paper investigates the residual strain of tetraethoxysilane (TEOS), low temperature oxide (LTO), 7wt% and lOwt% phosphosilicate glass (PSG). Euler beams and a bent-beam strain sensor are used to measure residual strain. A polysilicon layer is used as a sacrificial layer, which is selectively etched away by XeF_(2). First, the residual strain of as-deposited films is measured, which is quite large. These films are annealed at 500℃, 600℃, 700℃ and 800℃ for 1 hour and residual strain is measured. Then, the residual strain after annealing at the conditions for depositing a 2μm thick polysilicon at 585℃ and 625℃ are also measured. Our results show that the 7wt% PSG is best suited as the sacrificial layer for 2μm thick polysilicon processes.