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유병헌(B. H. Yoo),김영미(Y. M. Kim),조성학(S. H. Cho),장원석(W. S. Chang),김재구(J. G. Kim),황경현(K. H. Hwang),이동주(D. J. Lee) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
For longer than picosecond pulses, bulk damage inside defect-free dielectrics involves the heating and multiplication of spurious electrons by the incident laser beam and transfer of this energy to the lattice. The situation is quite different for femtosecond pulses which are shorter than the time scale for electron energy transfer to the lattice. Damage caused by these pulses is produced with smaller statistical uncertainty and is controllable on a microscopic scale. These properties can be exploited to produce laser devices such as arrays of damage dots for all optical memories with high data storage density or arrays of parallel grooves to form transmission gratings. In this work, we observed characteristic of the femtosecond laser machining in BK7 and fused silica.
펨토초 레이저를 이용한 투명재료 내부의 극미세 프로세스
조성학(S. H. Cho),김영미(Y. M. Kim),유병헌(B. H. Yoo),장원석(W. S. Chang),김재구(J. G. Kim),황경현(K. H. Hwang) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
We will provide the ultra-precise material processing technique with a femtosecond pulse laser system.
RF 스위치 적용을 위한 박막 PZT 엑추에이터의 d<SUB>31</SUB> 구동과 d<SUB>33</SUB> 구동 특성 비교
신민재(M. J. Shin),서영호(Y. H. Seo),최두선(D-S. Choi),황경현(K-H. Hwang) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
In this work, we present the comparison between d<SUB>31</SUB> and d<SUB>33</SUB> mode characterization using the PZT micro-actuator for large displacement. The PZT micro-actuator consisted of Si, PZT, and Pt layer on SOI wafer. The electrode shapes were laminated and interdigitated for d<SUB>31</SUB> and d<SUB>33</SUB> mode, respectively. In order to characterize the actuation mode, we measured the displacement using laser interferometer. The maximum displacement of d<SUB>31</SUB> mode was 12.2㎛ at 10V, the actuation characterization of d<SUB>31</SUB> was better than that of d<SUB>33</SUB> mode. We estimated that displacement of d<SUB>33</SUB> mode would be larger than that of d<SUB>31</SUB> above 30V.
김영미(Y. M. Kim),유병헌(B. H. Yoo),조성학(S. H. Cho),장원석(W. S. Chng),김재구(J. G. Kim),황경현(K. H. Hwang) 한국정밀공학회 2006 한국정밀공학회 학술발표대회 논문집 Vol.2006 No.5월
We have successfully formed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. Thanks to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.