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PbS quantum dot-sensitized solar cells with perovskite passivation layer
허진혁,임상혁 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0
Metal chalcogenide nanomaterials have been of great interest as new light absorber replacing conventional Ru/organic dyes because of their unique properties. Among them, the PbS QDs is an ideal sensitizer because of their large Bohr radius of 18 nm and low bulk energy band gap of ~0.41 eV. Generally, the PbS QD-sensitized solar cells (QD-SSCs) are fabricated by depositing the colloidal PbS QDs with long alkyl ligands into multiple layers. Therefore, the capping ligands should be replaced to short ligands to improve the charge transfer/transport. In terms of charge extraction, the direct formation of PbS QDs on meso scopic TiO2 is more desirable. Here, we formed the PbS QDs on mesoscopic TiO2 by spin-assisted successive precipitation and anion exchange reaction (spin-SPAER) method and further improved their efficiency by introduction of hybrid perovskite passivation layer.
2P-531 Organic-inorganic hybrid perovskite nonvolatile resistive random access memory
허진혁,임상혁 한국공업화학회 2017 한국공업화학회 연구논문 초록집 Vol.2017 No.1
Recently, the memory devices are the essential components of most electric device in our daily life. Especially, the random access memory (ReRAM) has received great deal attention as promising next-generation nonvolatile memory device. Organic-inorganic hybrid perovskite (OHP) materials exhibited unique phenomenon, which is hysteresis of photocurrent density-voltage (J-V) curves due to displacement current of ferroelectric materials with multi-domain structures, ions/defects migration by ionic crystalline characteristics of perovskite material, and charge trapping/detrapping in bulk and interface of perovskite material. Accordingly, we fabricated the CH3NH3PbI3 (MAPbI3) OHP memory with different grain size MAPbI3 OHP film controlled by non-solvents inter-diffusion controlled crystallization process. The MAPbI3 OHP memory exhibited > 0.1 TB/in2 storage capacity, > 600 cycles endurance, > 104 s data retention time, ~ 0.7 V set, and ~ -0.61 V re-set bias voltage.
Thermally stable inorganic CsPbI2Br perovskite solar cells
허진혁,김상수,박진경,임상혁 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
We demonstrated a highly efficient and thermally stable inorganic CsPbI2Br MHP solar cells using with a P3HT hole transporting layer by spin-washing of the P3HT HTL since the light harvesting efficiency is improved by minimizing the co-absorption of light by P3HT, and Voc is enhanced because of the increased valence band maximum position of the spin-washed P3HT HTL. The spin-washed CsPbI2Br MHP solar cell exhibited 1.24V Voc, 14.20mA/cm2 Jsc, 81.52% FF, and 14.35% PCE. The unencapsulated spin-washed CsPbI2Br MHP solar cell went through 7.56% degradation after a 1000h thermal stability test under 100°C/25% relative humidity (RH) and simultaneous 1 sun light soaking conditions. In addition, the unencapsulated spin-washed CsPbI2Br MHP solar submodule with 25 cm2 of masked active area showed a 98% geometrical FF, 115.09mA Isc, 3.54V Voc, 71.09% FF, and 11.58% PCE while exhibiting 8.80% of degradation during a thermal stability test at 100℃/25% RH and 1 sun light soaking for 1000h.