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N-Type c-Si 이종접합 태양전지 제작을 위한 a-Si:H(p) 가변 최적화
허종규(Heo, Jong-Kyu),윤기찬(Yoon, Ki-Chan),최형욱(Choi, Hyung-Wook),이영석(Lee, Young-Suk),김영국(Kim, Young-Kuk),이준신(Yi, Jun-Sin) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06
Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick (500{mu}m) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.
齒科醫師의 態度와 行動調節方法사이의 相關關係에 관한 硏究
許鍾奎,韓世鉉 大韓小兒齒科學會 1989 大韓小兒齒科學會誌 Vol.16 No.1
The autor investigated the attitudes of dental practitioners, the frequency of behavior management techniques for use with nonhandicapped preschooler patients and the interrelationships of these two. The subjects were 101 dentists aging from 26 to 50. The following results were obtained: 1. Among the behavior mangement techniques, treatment defer, parent remaining in operatory and tell-show-do were used frequently, hand-over-mouth and physical restraint were not used particularly, N2O-O2 gas inhalation was used scarcely. 2. Most respondent was likely to agree that gaining the preschool child's compliance with planned treatment is the goal of their behavior management. 3. Those who agreed that it is important to establish authority with preschool patient were less likely to defer nonemergency treatment because of the child's uncooperative behavior, less likely to allow the parent to remain in the operatory, and more likely to use physical restraint method. 4. Those who agreed that postponing treatment because of the child's uncooperativeness is neglecting the dentist's duty to the patient were less likely defer treatment. 5. Those who agreed that parents are more of a hindrance than a help were less likely to allow parents in the operatory.
rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications
Vinh Ai Dao,허종규,Hyungwook Choi,Hyeongsik Park,Kichan Yoon,Youngseok Lee,Yongkuk Kim,이준신,Nariangadu Lakshminarayan 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Indium tin oxide (ITO) films of low resistivity, high transmittance and good figure of merit were prepared by radio frequency magnetron sputtering, at different substrate temperatures (Ts) under such a high k/d value and used as anti-reflection layer in heterojunction solar cells. For film deposition in the Ts range 150 ℃ < Ts ≤ 250 ℃, XRD shows that coexistence of the h1 0 0i and h1 1 1i textures. The resistivity and Hall mobility of ITO films were improved due to thermally induced crystallization. However, carrier concentration of these ITO films is sensitive to the Ts. We attributed these effects to the Ar+ ions bombardment and differing adatom mobility of the heated atoms on the substrate under such a high k/d value. Those ITO films were used to fabricate single-side heterojunction solar cells. As the Ts is increased, the device performance improves and the best photo voltage parameters of the device were found to be Voc = 640 mV, Jsc = 36.90 mA/㎠, FF = 0.71, η = 16.3% for Ts = 200 ℃. The decrease in performance beyond the Ts of 200 ℃ is attributed to hydrogen effusion to the defect in emitter layer. We noted that the figure of merit value of ITO films was reflected in the performance of devices.
이준신,조재현,박형준,김현민,손혁주,김재홍,허종규,손선영,박근희,남은경,정동근 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
In organic light-emiting diodes (OLEDs), both the electrons and the holes ned to be injected efficiently to obtain the best device performance. This means that a smal injection barier height at the indium-tin oxide (ITO)/organic interface is required. The insertion of an insulating layer betwen the ITO and the organic layers leads to a significant improvement in the charge injection and the electroluminescence output. In this study, the surface of the ITO anode in OLEDs was treated with an HfOX deposition proces by using an atomic-layer chemical- vapor deposition system (ALCVD). The OLEDs fabricated on the HfOX-treated ITO anode showed a lower impedance and a higher conductance and capacitance. The changes in the capacitance, the conductance and the impedance were atributed to the enhanced carier tunneling and to a change in the work function of ITO. In this work, we used an impedance spectroscopy analysis to determine the effect of the HfOX treatment on the surface of ITO and to model the equivalent circuit for OLEDs. Impedance spectroscopy is one of the most powerful tools used to study equivalent circuit models for and the charge carier dynamics and the dielectric properties of organic devices. Devices with an ITO/organic material/Al structure could be modeled as resistances and capacitances aranged in paralel or in series. The number of elements depend on the composition of the structure, esentialy the number of layers and the contacts.
Memory Characteristics of MNNOS Capacitors with Various Energy Band Gaps of Silicon Nitride
Hyukjoo Son,Youn-Jung Lee,정성욱,Kyungsoo Jang,Jaehong Kim,조재현,허종규,김병성,이준신 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.4
A thin-film transistor-type nonvolatile memory device with a nitride-nitride-oxide (NNO) stack structure was fabricated. The silicon-nitride layers for blocking and charge storage were deposited at low temperatures by employing ICP-CVD. The optical band gap energies of the silicon nitride were between 2.8 eV and 5.8 eV. We used silicon nitride with optical band gap energies of 2.8 eV and 5.8 eV for the charge storage layer and the blocking layer, respectively. The thin tunneling layer formed by silicon-oxynitride was only grown via a nitrous-oxide plasma. The characteristics of the NNO stack structure showed a very large memory window. We successfully obtained a memory window of 24 V with a bias voltage swing between -20 V and +20 V. A large capacitance-voltage hysteresis was obtained, which was probably a result of the electrons and the holes trapped at deep trap levels and of the band gap offset. Low temperature fabrication enables the memory device to be applied to poly-Si TFT for display technology. A thin-film transistor-type nonvolatile memory device with a nitride-nitride-oxide (NNO) stack structure was fabricated. The silicon-nitride layers for blocking and charge storage were deposited at low temperatures by employing ICP-CVD. The optical band gap energies of the silicon nitride were between 2.8 eV and 5.8 eV. We used silicon nitride with optical band gap energies of 2.8 eV and 5.8 eV for the charge storage layer and the blocking layer, respectively. The thin tunneling layer formed by silicon-oxynitride was only grown via a nitrous-oxide plasma. The characteristics of the NNO stack structure showed a very large memory window. We successfully obtained a memory window of 24 V with a bias voltage swing between -20 V and +20 V. A large capacitance-voltage hysteresis was obtained, which was probably a result of the electrons and the holes trapped at deep trap levels and of the band gap offset. Low temperature fabrication enables the memory device to be applied to poly-Si TFT for display technology.