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비정질 실리콘의 자기정렬콘텍 (Self Aligned contact)에서 LPCVD 공정시간에 따른 특성 변화 연구
최광남(Kwang Nam Choi),곽성관(Sung Kwan Kwak),김동식(Dong Sik Kim),정관수(Kwan Soo Chung) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
The effects of processing time on the crystallization of the amorphous silicon for self aligned contact (SAC) pad deposited on the silicon substrate using low-pressure chemical vapor deposition (LPCVD) are presented in this paper. The amorphous silicon film is being subjected to processing time from 60 to 100 min for usual amorphous silicon growth. Usual processing lime of the amorphous silicon is 100 minutes, but we tried 60 minutes processing time to study the effect on the property of silicon. Transmission electron microscopy (TEM) shows that the crystallization of the amorphous silicon to poly silicon begins to occur for 60 min of LPCVD. The tendency to grow ploy crystalline silicon is likely due to the reduced surface oxidation during grain growth and crystallization at shorter processing time. Reduced contact resistance of the poly silicon contact pad was also measured for 60 min processing time. Our result will be beneficial to mass production companies. The detailed study of the structural, morphological and property changes of the amorphous silicon layer upon different processing time will be presented.
DC magnetron 방법과 RF 스퍼터링 방법으로 제작된 Nickel Oxide 박막의 특성 연구
최광남(Kwang Nam Choi),박준우(Jun Woo Park),백승호(Seoung Ho Baek),이호선(Ho Sun Lee),곽성관(Sung Kwan Kwak),정관수(Kwan Soo Chung) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
We deposited nickel oxide(NiO) thin films on silicont'Si) substrates at Room temperature and 500℃ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.
Characteristics of Self assembled Monolayer as $Ta_2O_5$ Dielectric Interface for Polymer TFTs
최광남,곽성관,정관수,김동식,Choi, Kwang-Nam,Kwak, Sung-Kwan,Chung, Kwan-Soo,Kim, Dong-Sik The Institute of Electronics and Information Engin 2006 電子工學會論文誌. Journal of the institute of electronics Vol.43 No.1
중합 박막 트랜지스터의 특성은 유기 반도체에 앞서 게이트유전체 표면의 화학적 변형에 의해 조절 가능하다. 화학적 처리는 자기조립 단분자막 형태의 유전물질과 함께 파생된 tantalum pentoxide($Ta_2O_5$) 표면으로 구성된다. Octadecyl trichlorosilane(OTS), hexamethyldisilazane (HMDS), aminopropyltreithoxysilane(ATS) 자기조립 단분자막의 성장은 중합체로 결합된 poly-3-hexylthiophene(P3HT)의 분위기에서 $0.01\sim0.06cm2/V{\cdot}s$의 이동도로 진행되었다. 이동도 향상 메커니즘은 중합체와 자기조립 단분자막 사이의 분자 상호작용에 영향을 미치는 것으로 확인하였다. 이는 향후 ploymer TFT의 유전박막 중 하나로서 유용하게 사용 될 것이다. The characteristics of polymeric thin-film transistors(TFTs) can be controlled by chemically modifying the surface of the gate dielectric prior to the organic semiconductor. The chemical treatment consists of derivative the tantalum pentoxide($Ta_2O_5$) surface with organic materials to form self-assembled monolayer(SAM). The deposition of an octadecyl-trichlorosilane(OTS), hexamethy-ldisilazone(HMDS), aminopropyltreithoxysilane(ATS) SAM leads to a mobility of $0.01\sim0.06cm2/V{\cdot}s$ in a poly-3-hexylthiophene(P3HT) conjugated polymer. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and SAM. These result can be used for polymer TFT's dielectric material.
곽성관(Sung Kwan Kwak),최광남(Kwang Nam Choi),이진민(Jin Min Lee),강창수(Chang Soo Kang),김동진(Dong Jin Kim),정관수(Kwan Soo Chung) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
Multilayer transparent electromagnetic wave shielding film with 1 m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23㏈(99.5%) in 2-18 ㎓ range and the transmittance of 83.1% in 400-700㎚.
최광남,곽성관,정관수 경희대학교 레이저공학연구소 2006 레이저공학 Vol.17 No.-
Multilayer transparent electromagnetic wave shielding film with 1m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23dB(99.5%) in 2-18 GHz range and the transmittance of 83.1% in 400-700nm.