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조현민,이우성,임욱,유찬세,강남기,박종철,Cho, H. M.,Lee, W. S.,Lim, W.,Yoo, C. S.,Kang, N. K.,Park, J. C. 한국마이크로전자및패키징학회 2000 마이크로전자 및 패키징학회지 Vol.7 No.1
기판과의 동시소성에 의한 고주파 MCM-C (Multi Chip Module-Cofired)용 저항을 제작하고 DC 및 6 GHz 까지의 RF 특성을 측정하였다. 기판은 저온 소성용 기판으로서 총 8층으로 구성하였으며, 7층에 저항체 및 전극을 인쇄하고 via를 통하여 기판의 최상부까지 연결되도록 하였다. 저항체 페이스트, 저항체의 크기, via의 길이 변화에 따라서 저항의 RF 특성은 고주파일수록 더욱 DC 저항값에서 부터 변화되는 양상을 보였다. 측정결과로부터 내부저항은 저항용량에 관계없이 전송선로, capacitor, inductor성분이 저항성분과 함께 혼재되어 있는 하나의 등가회로로 표현할 수 있으며, 내부저항의 구조 변화에 의한 전송선로의 특성임피던스 $Z_{o}$의 변화가 RF 특성을 크게 좌우하는 것으로 보여진다. Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.
Photo-thermal-chemical Reaction Process of Tungsten Oxide for Electrochromic Application
H. Cho(조현민),J. Kwon(권진형),W. S. Lee(이원섭),W. S. Chang(장원석),S. H. Ko(고승환) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
A Direct laser write (DLW) process has broadened a novel patterning method for advanced electronic device fabrication. The DLW process bases on the photo-thermal-chemical reaction and features such as high precision, fast processing, and room temperature processability without inert gas. Before, the process scalability of the interaction between the nanomaterials and laser has been examined on the various conductive metal nanomaterials such as gold, silver, and copper. Although the direct laser writing process has shown many achievements on the metal nanomaterials, it has rarely been researched for the laser-material interaction of the metal oxide nanomaterials. In this study, WOx metal oxide material employs the DLW process for post-processing which enables patterning and annealing simultaneously with inducing photo-chemical redox reaction as well as photo-thermal effect. The DLW-processed WO₃ thin film has shown similar electrochemical performances for the electrochromic application to the thermal annealed WO₃ thin film. We have demonstrated a facile and fast fabrication of the electrochromic device (ECD) with the DLW-processed WO₃ thin film layer.