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Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
조규준,안호균,김성일,강동민,이종민,민병규,이상흥,김동영,윤형섭,김해천,이경호,주철원,임종원,권용환,남은수 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.4
An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the -shaped gate with the “head” of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the “foot” of the gate which showed a possibility for a gate length reduction.