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공공기관 경영평가 결과 영향요인에 관한 탐색적 연구: 강소형 기관 목표 모호성과 자율성의 다차원 구성개념을 중심으로
정진용 ( Jinyong Jeong ) 명지대학교 정부행정연구센터 2020 정부행정 Vol.16 No.-
본 연구는 경영평가 결과에 영향을 주는 공공기관 요인을 강소형 기관 맥락에서 찾고자 하였다. 강소형 기관은 복합적 소유구조에서 기인하는 조직목표 모호성과 정부에 대해 과도하게 의존적인 재무구조에서 기인하는 제한된 조직 자율성을 가지고 있다. 이러한 조직특성이 공공기관 경영평가 결과에 주는 영향을 실증적으로 분석하기 위해 목표 모호성과 자율성 개념을 다차원으로 구성하고 개념별 관측지표를 설정하였다. 강소형 기관 직원을 대상으로 한 인식조사 결과, 목표 모호성은 경영평가 결과에 부(-)의 방향, 조직 자율성은 일부 정(+)의 방향으로 영향을 주었다. 한편, 인식조사 응답자를 소속기관 경영평가 결과에 따라 우수 그룹과 미흡 그룹으로 나누어 분석한 결과, 대부분의 목표 모호성과 조직 자율성 하위 변수들이 그룹 간 반대 방향의 영향을 주는 것을 확인하였다. 따라서 경영평가 제도가 공공기관 성과 제고에 유의미한 역할을 하기 위해서는 기관별 목표 모호성을 낮추고 조직 자율성을 높이는 전체 기조를 유지하되 성과그룹별 조직특성을 고려한 선별적 성과관리 전략을 마련할 필요가 있다. This study explores the factors that influence the result of public institution management evaluation in the context of comparatively small-sized organizations. Analyzing the governance structure of those institutions, we found they have goal ambiguity (caused by the complicated structure of governance) and limited autonomy (caused by the excessively dependent financial structure). To examine the influence of such organizational conditions on public institution management evaluation results, we created multi-dimensional conceptual constructs and measurement indicators of goal ambiguity and autonomy. The analysis of the questionnaire survey on public institution managers revealed the overall negative impact of goal ambiguity and the overall positive impact of organizational autonomy on management evaluation results. The regression analysis on two sub-samples (respondents from high-grade institutions and low-grade ones) found the conflicting influences of goal ambiguity and organizational autonomy between the two groups. This study suggests a general direction for decreasing goal ambiguity and raising organizational autonomy but a selective strategy for performance management that reflects organizational characteristics embedded in a particular level of performance.
정진용(Jinyong Jeong),조종민(Jongmin Jo),이준원(Junwon Lee),채우규(Woo-Kyu Chae),차한주(Hanju Cha) 전력전자학회 2015 전력전자학회 논문지 Vol.20 No.2
Stand-alone inverter supplies constant voltage to loads. However, when a three-phase stand-alone inverter supplies unbalanced load, the generated output voltages also become unbalanced. The nonlinear characteristics of inverter dead time cause a more serious distortion in the output voltage. With unbalanced load, voltage distortion caused by dead time differs from voltage distortion under balanced load. Phase voltages in the stationary reference frame include unbalanced odd harmonics and then, d-q axis voltages in the synchronous reference frame have even harmonics with different magnitude, which are mitigated by the proposed multiple resonant controller. This study analyzes the voltage distortion caused by unbalanced load and dead time, and proposes a novel dead time compensation method. The proposed control method is tested on a 10-kW stand-alone inverter system, and shows that total harmonic distortion (THD) is reduced to 1.5% from 4.3%.
모듈레이티드 펄스 스퍼터링으로 상온 증착한 Indium-Tin-Oxide (ITO) 나노 박막
유영군(Younggoon You),정진용(Jinyong Jeong),주정훈(Junghoon Joo) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.3
High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power , but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported . The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas , MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, In2O3 : SnO2 composition ratio of 9 : 1 wt% target was used , Ar : O2 flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of O2 and then fixed 2 ~ 6 sccm was compared against that . The thickness of the thin film deposition is fixed at 60 nm , when the partial pressure of oxygen at 9.1%, the specific resistance value of 4.565 × 10<SUP>?4</SUP> Ωcm, transmittance 86.6%, mobility 32.29 cm2 / Vs to obtain the value