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PLT(Pb1-xLax)Ti1-x/4O3타켓의 제조 및 rf - magnetron sputtering 법으로 박막형성
정재문,조성현,박성근,최시영,김기완 ( J . M . Jung,S . H . Cho,S . G . Park,S . Y . Choi,K . W . Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.1
Using a rf-magnetron sputtering method, highly c-axis oriented La modified PbTiO₃ (PLT) ferroelectric thin films with compositions of (Pb_(1-x)La_x)Ti_(1-x)₄O₃, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 3f 1 at 1 kHz and remanent polarization(Pr) of 9μC/㎠, 8μC/㎠ and 7μC/㎠.