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Fe<sub>a</sub>Si<sub>b</sub>C<sub>c</sub>H<sub>d</sub> 박막의 물리·화학 및 광학적 특성
김경수,전법주,정일현,Kim, Kyung-soo,Jean, Bup-Ju,Jung, Il-Hyun 한국공업화학회 1999 공업화학 Vol.10 No.1
현재 iron silicide막을 제작하고 있는 방법은 열처리를 수행함으로써 막의 계면 상태가 좋지 않으나 플라즈마를 이용하였을 때는 열처리를 수행하지 않으므로 양질의 막을 얻을 수 있다. 본 실험에서 제작된 막은 Raman 스펙트럼 $250cm^{-1}$에서 나타난 Fe와 Si의 진동모드와 FT-IR에 의해 유기화합물 뿐만 아니라 Fe-Si의 결합이 형성되었음을 확인하였다. 또한 플라즈마의 높은 에너지에 의해 낮은 기판 온도에서 에피택시 성장이 진행되는 동안 iron silicide는 [220]/[202], [115] 등과 같은 격자구조를 갖는 ${\beta}$-상으로 성장하였다. 제조된 막의 band gap은 1.182~1.174 eV의 값을 가지고, 광학적 에너지갭을 3.4~3.7 eV의 값을 나타내었다. 막 내의 유기화합물에 의해 유발되는 Urbach tail과 sub-band-gap 흡수가 관측되었다. 따라서 플라즈마를 이용하여 제작된 막은 단일결정이 성장되어 양질의 박막을 얻을 수 있음을 확인하였다. When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.
플라즈마에 의해 성장된 SiO2 막에서 산소전하밀도가 Flatband Voltage 의 이동에 미치는 영향
김경수,전법주,오인환,정일현 ( Kyung Soo Kim,Bup Ju Jeon,In Hwan Oh,Il Hyun Jung ) 한국공업화학회 1997 응용화학 Vol.1 No.1
The silicon oxide films were grown by Electron Cyclotron Resonance(ECR) diffusion and CVD method at low temperature. The flatband voltage(V_(FB)) was minimum at 200W, and reached a steady value at microwave powers higher than 400W. Also The flatband voltage(V_(FB)) was proportional to interface oxide charge density(Q_(it)+Q_f). For high quality SiO₂ film, consequently, it was desirable to grow SiO₂ films at lower microwave power.
페로센으로부터 증착된 Fe-C:H 막에 대한 밴드갭 분석
김경수,정일현 한국공업화학회 2004 공업화학 Vol.15 No.1
페로센 (Fe(C_(5)H_(5))_(2))으로 RF 플라즈마를 이용하여 Fe-C : H 막을 증착하였다. 증착한 Fe-C : H 막은 C-H_(n), C=C, C-CH_(n)으로 구성되어 있었으며, Raman과 XRD 분석을 이용하여 계면에서 Fe-Si의 결합을 확인할 수 있었다. 또한 Fe-Si 클러스터에 의하여 island 성장이 진행되었다. 증착 속도는 수소의 유량이 증가할수록 선형적으로 증가하였다. Fe-C : H 막과 Fe-Si의 밴드갭은 각각 모든 실험 조건에서 약 3.8 eV과 0.85~0.86 eV이었다. 막의 Urbach tail과 결함수는 수소 유량이 증가할수록 감소하였다. Fe-C:H films were deposited in a RF plasma with ferrocene (Fe(C_(5)H_(5)_(2)). The deposited Fe-C:H films consisted of C-H_(n), C=C, and C-CH_(n). We confirmed the Fe-Si bonding in the interface using Raman and XRD analysis. Also, island growth was occured by the formation of Fe-Si chister. The deposition rate linearly increased with the flow rate of hydrogen. In all condition. In all conditions of experiments, the band gap of Fe-C:H film and Fe-Si was about 3.8 eV and 0.85∼0.86 eV, respectively. Urbach tail and the number of defects decreased with increasing the flow rate of hydrogen.
Rf - plasma CVD 에 의해 제조된 Iron Silicide 막의 특성
김경수,정일현,전법주,모만진 한국공업화학회 1998 응용화학 Vol.2 No.1
The consolidation of transition metal and silicon is formed various phase transition metal silicide by d-orbital of transition metal, and there exists two main stable phase for FeSi₂ : the semiconducting β-phase with orthorhombic structure and the metallic α-phase with tetragonal symmetry. Iron Silicide thin layer have been grown on silicon by rf-plasma CVD method in the variables of plasma. In this paper, we have been convinced of forming the iron silicide layers at 6.4eV and 1.5eV by XRF(X-ray Fluoroscence) and the amorphous silicons(a-Si:H) at 600∼700㎝¹ by FT-IR.
김경수,정일현,윤용수,전법주,모만진 한국공업화학회 2001 응용화학 Vol.5 No.2
We will apply in the plasma treatment technology from the research which controls the exhaust gas treatment. The N-O of active species increased with rf-power and flow rate in plasma. The removal ratio of hydrogen cyanide gas was higher at 40 watt than above 80 watt. In the case of the treatment of hydrogen cyanide at the lower rf-power, it was showed that restrained from the formation of NOx and the hydrogen cyanide had the higher removal ratio in this process.
김경수,이우걸,윤용수,정일현 한국공업화학회 2003 응용화학 Vol.7 No.2
Fe-C:H films were deposited in a RF plasma with ferrocene (Fe)C_(5)H_(5))₂). The deposited Fe-C:H films consisted of C-H_(n), C=C, and C-CH_(n). The deposition rate linearly increased with the flow rate of hydrogen. In all conditions of experiments, the band gap pf Fe-C:H film was about 3.8 eV.