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Aluminium-doped Zinc Oxide 투명전도막을 적용한 Photodiode의 수광효율 향상
정윤환,김호걸,박춘배,Jeong, Yun-Hwan,Jin, Hu-Jie,Park, Choon-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.9
In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.
수소 분위기에서 후열처리한 상온증착 ZnO:Al 박막의 전기적 특성 분석
정윤환,진호,김호걸,박춘배,Jeong, Yun-Hwan,Chen, Hao,Jin, Hu-Jie,Park, Choon-Bae 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.4
In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.