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Gettering 효과측면에 對한 Lifetime 측정
정원채 경기대학교 부설 산업기술종합 연구소 1996 산업기술종합연구소 논문집 Vol.12 No.-
Metallic impurities, such as transition group elements (e.g. Fe, Ni, Au, etc.) are expressed as so-called life time killer due to responsibility for the life time. These elements are located at interstitial or substitional lattice sites in the silicon wafer and generation-recombination centers for carriers. To remove this effects, one technique is intentionally damaged the back surface of the wafer as an external gettering method. Another series of method use one or more thermal cycles to produce the desired gettering effects as an internal gettering treatments. Many semiconductor wafer makers used usually mechanical abrasion methods such as lapping or wet blasting for the gettering effects. In this thesis, a method of implantation with Ar ions is additionally demonstrated and compared with a conventional method.
실리콘에 MaV로 이온주입된 인의 결함분포와 profile에 관한 연구
정원채 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.9
This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.
SiGe에 이온 주입과 열처리에 의한 불순물 분포의 연구
정원채,Jung, Won-Chae 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6
For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.
정원채 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere,C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of Rp and ΔRp between the modified Se of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.
낮은 에너지로 실리콘에 이온 주입된 분포와 열처리된 인듐의 거동에 관한 시뮬레이션과 모델링
정원채,Jung, Won-Chae 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.12
For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.
저압가스증착에 의해서 증착된 탄탈옥사이드 절연층에 관한 연구
정원채 경기대학교 산업기술종합연구소 2006 산업기술종합연구소 논문집 Vol.31 No.-
For the future memory-device, tantalpent-oxide(Ta_(2)O_(5)) as a dielectric layer can be used in integrated CMOS circuits. The dielectric constant of Ta_(2)O_(5) material has about 6 times higher value than conventional silicon-dioxide(SiO_(2)). Ta_(2)O_(5) layer by LPCVD(Low Pressure Chemical Vapor Deposition) has better characteristics of high conformity and edge-covering without shadow-effects in comparison with sputtering method. In this experiment, the vertical furnace with reactor of hot wall is shown good homogeneity in radial and axial directions.
A Study on Distributions of Boron Ions Implanted by Using B and BF2 Dual Implantations in Silicon
정원채 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.3
For the fabrication of PMOS and integrated semiconductor devices, B, BF2 and dual elements with B and BF2 can be implanted in silicon. 15 keV B ions were implanted in silicon at 7° wafer tilt and a dose of 3.0×1016 cm-2. 67 keV BF2 ions were implanted in silicon at 7° wafer tilt and a dose of 3.0×1015 cm-2. For dual implantations, 67 keV BF2 and 15 keV B were carried out with two implantations with dose of 1.5×1015 cm-2 instead of 3.0×1015 cm-2, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at 1,050°C for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the BF2+ implant are shallower than those for a single B+ and dual (B+ and BF2 +) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and BF2 + implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.