실리콘에서 깊은 접합의 형성을 위한 알루미늄의 확산 모델

정원채 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.4

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O2 gas exhibited to a remarkably deeper profile than inert gas with N2 in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 μm for the fabrication of power silicon devices. 본 연구는 실리콘에 이온 주입된 알루미늄의 확산효과와 물리적인 메커니즘 을 조사하였다. 전력반도체소자의 제작을 위해서 알루미늄 이온주입은 전력다이오드, 트랜지스터, 그리고 사이리스터에서 이미터와 긴 드리프트영역을 위해서 사용될 수 있다. 알루미늄이 주입된 실리콘기판은 산소가스 분위기에서 열처리한 경우가 질소가스에서 열처리한 경우보다 현저히 더 깊은 접합구조의 프로파일을 나타내었다. 열처리에 의해서 이온 주입된 알루미늄의 확산프로파일은 산소가스분위기에서 산화 증대에 기인한 확산효과를 나타내었다. 이온주입과 확산실험에 대한 도핑농도 분포를 조사하기 위해서 SR 과 SIMS 장치들이 측정을 위해서 사용되었다. 본 실험의 깊은 접합을 위해서 알루미늄 이온주입과 확산은 전력실리콘소자들의 제작을 위해서 20 ㎛ 까지 의 깊은 접합 구조를 형성하였고 900℃에서 1100℃ 온도구간에서 실험데이터에 근거하여 확산계수를 구하는 정확한 방법과 확산모델을 제시하였다.

실리콘 기판에 Ar 이온주입과 wet blasting 처리후에 lifetime 비교

정원채 대한전자공학회 1997 대한전자공학회 학술대회 Vol.1997 No.11

연초(煙草)의 연구(硏究) 동향(動向) -육종(育種)을 중심(中心)으로

정원채 한국식물병리학회 1975 한국식물보호학회지 Vol.14 No.3

집속이온빔 연마에 의한 패턴의 형태에 관한 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.11

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

실리콘에 붕소의 고에너지 이온주입에 의한 농도분포에 관한 연구

정원채 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.4

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

SOI-Wafer제작 기술에 관한 연구

정원채 경기대학교연구교류처 1995 論文集 Vol.36 No.-

A Study on Lateral Distribution of Implanted Ions in Silicon

정원채,김형민 한국전기전자재료학회 2006 Transactions on Electrical and Electronic Material Vol.7 No.4

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range (1 KeV ~ 30 MeV) than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1 MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

실리콘 직접 본딩에 의한 P-N 접합의 특성에 관한 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

실리콘에 고에너지 안티몬이온주입의 실험과 개선된 모델에 관한 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.11

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

비정질 실리콘에 인의 이온주입과 다결정 실리콘에 관한 연구

정원채 경기대학교부설 산업기술종합연구소 1997 산업기술종합연구소 논문집 Vol.14 No.-

Amorphous layers of thin films are widely used in semiconductor process. For the thickness uniformity and insulation between conducting layers, SiO₂ layer can be deposited on silicon substrate. Amorphous layers are fabricated using LPCVD(low-pressure chemical vapor deposition). Nowadays this method is widely used for the depositions of amorphous and poly silicon layers. The thickness of deposited amorphous layer was 5000Å. In this study, the undoped amophous layers and doped amophous layers are fabricated using LPCVD at 531℃ with SiH₄, gas or at same temperature with PH₃, gas during deposition. respectively. In this experiments, undoped amorphous layers are deposited with SiH₄, and SiH gas in a low-pressure reactor using LPCVD. These amorphous layers can be doped for poly silicon gate by phosphorus ion implantation. The experiments of this study are carried out by by phosphorus ion implantation at 40 keV in doped and undoped amorphous silicon layers. The distributed phosphorus ion profiles are measured by SIMS(Cameca 6f).