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Global Dilation Block과 Edge Loss를 이용한 안개 제거 GAN
정명준(Myeong-Jun Jeong),조근식(Geun-Sik Jo) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
Image dehazing aims for recovering dehaze image into clear image. Despite tremendous effort with image dehazing, it"s still a challenge to train an unpaired set of hazy and corresponding ground images. To solve this problem, we propose a new model for unpaired image dehazing. This new model is built upon CycleGAN, we increase the receptive field and integrate edge information loss. The result of the experiment shows that proposed methods not only improves performance at D-HAZE Dataset, but also remove haze while keeping edge and texture information
황성민,노광명,정명준,허민,정하풍,서정원,박찬광,고요환,이대훈,Hwang, Seong-Min,Rho, Kwang-Myoung,Chung, Myung-Jun,Huh, Min,Jeong, Ha-Poong,Suh, Jeong-Won,Park, Chan-Kwang,Koh, Yo-Hwan,Lee, Dai-Hoon 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.6
We proposed SAW (Self-Algined Selectively Grown W-Gate) MOSFET structure, and strudied electrical characteristics of the fabricated SAW MOSFETs. The threshold volgate of 0.21${\mu}$m SAW NMOSFET was 0.18 V and that of 0.24 ${\mu}$m SAW PMOSFET was -0.16 V. The subthreshold slope was 74 mV/decade for NMOSFET and 82 mV/decade for PMOSFET. The maximum transconductance of NMOSFET and PMOSFET, at V$_{GS}$=2.5 V and V$_{DS}$=1.5 V, were260 mS/mm and 122 mS/mm. The measured saturation drain current at V$_{GS}$=V$_{DS}$ =2.5 V was 0.574 mA/${\mu}$m for NMOSFET and -0.228 mA/${\mu}$m for PMOSFET. The gate resistance of SAW MOSFET was about m$\Omega$cm and the n+-p junction capacitance of SAW MOSFET was about 10% lowas than that of the conventional MOSFET's.