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Co/Ti 이중막 실리사이드를 이용한 $p^{+}$-n극저접합 다이오드의 제작과 전기적 특성
장지근,엄우용,장호정,Chang, Gee-Keun,Ohm, Woo-Yong,Chang, Ho-Jung 한국재료학회 1998 한국재료학회지 Vol.8 No.4
n-well Si(100) 영역에 $BF_{2}$를 이온주입 [에너지: 30KeV, 주입량 : $5\times10^{15}cm^{-2}$] 하고 Co($120\AA$)/Ti($40\AA$)이중막을 진공증착하여 RTA-silicidation을 통해 Co/Ti 이중막 실리사이드층을 갖는 p+ -n극저접합 다이오드를 제작하였다. 제작된 소자의 이상계수와 비접촉저항 및 누설전류는 각각 1.06, $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$, $8.6\muA/\textrm{cm}^2$(-3V)로 나타났으며 실리사이드층을 갖는 이미터 영역의 면저항은 약 $8\Omega\Box$로, 실리상이드/실리콘 계면에서 보론 농도는 약 $6\times10^{19}cm^{-3}$으로, 실리사이드 두께(~$500\AA$)를 포함한 접합깊이는 약 $0.14\mu{m}$로 형성되었다. 다이오드 제작에서 Co/Ti 이중막 실리사이드 층의 형성은 소자의 누설전류를 다소 증가시켰으나 이상계수의 개선과 이미터 영역의 면저항 및 비접촉저항의 감소를 가져왔다. The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.
실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작
장지근,윤진모,정진철,김민영,Chang, Gee-Keun,Yoon, Jin-Mo,Jeong, Jin-Cheol,Kim, Min-Young 한국재료학회 2000 한국재료학회지 Vol.10 No.2
Si FEA로부터 tip의 표면을 Ti 금속으로 silicidation한 새로운 3극형 Ti-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. 제작된 소자에서 단위 pixel(pixel area : $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$, tip array : $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$)을 통해 측정된 전계 방출 특성은 $10^8Torr$의 고진공 상태에서 turn-on 전압이 약 70V로, 아노드 방출전류의 크기와 current degradation이 $V_A=500V,\;V_G=150V$ 바이어스 아래에서 각각 2nA/tip와 0.3%/min로 나타났다. 3극형 Ti-silicided Si FEA의 낮은 turn-on 전압과 높은 전류안정성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안정성과 낮은 일함수에 기인하는 것으로 판단된다. A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.
Si 태양전지에서 SiO<sub>2</sub> 광반사 방지막의 처리 효과
장지근,임용규,황용운,조재욱,Chang Gee-Keun,Lim Yong-Keu,Hwang Yong-Woon,Cho Jae-Uk 한국재료학회 2004 한국재료학회지 Vol.14 No.2
We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.
에피텍셜 베이스 실리콘 태양전지에서 Buried Contact 효과
장지근,임용규,정진철,Chang, Gee-Keun,Lim, Yong-Keu,Jeong, Jin-Cheol 한국재료학회 2003 한국재료학회지 Vol.13 No.5
The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{-}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n+ buried contact.
장지근,황용운,조재욱,이상열,Chang, Gee-Keun,Hwang, Yong-Woon,Cho, Jae-Uk,Yi, Sang-Yeoul 한국재료학회 2003 한국재료학회지 Vol.13 No.6
The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{+}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.
Co-실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작
장지근,김민영,정진철,Chang, Gee-Keun,Kim, Min-Young,Jeong, Jin-Cheol 한국재료학회 2000 한국재료학회지 Vol.10 No.4
Si FEA로 부터 tip의 표면을 Co 금속으로 silicidation한 새로운 3극형 Co-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. $10^{-8}Torr$의 고진공상태에서 제작된 소자의 단위 pixel(pixel 면적 : $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$, tip 어레이 : $45{\times}45$)를 통해 측정된 turn-on 전압은 약 35V로, 아노드 전류는 $V_A=500V,\;V_G=55V$ 바이어스 아래에서 약 $1.2{\mu\textrm{A}}(0.6nA/tip)$로 나타났다. 제작된 소자는 초기 과도상태를 제외하면 장시간의 동작을 통해 전계방출 전류의 감소없이 매우 안정된 전기적 특성을 나타내었다. Co-silicided Si FFA 의 낮은 turn-on 전압과 높은 전류안전성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안전성과 낮은 일함수에 기인하는 것으로 판단된다. A new triode type Co-silicided Si FEA(field emitter array) was realized by Co-silicidation of Co coated Si FEA and its field emission properties were investigated. The field emission properties of the fabricated device through the unit pixel with $45{\times}45$ tip array in the area of $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$ under high vacuum condition of $10^{-8}Torr$ were as follows : the turn-on voltage was about 35V and the anode current was about $1.2\mu\textrm{A}(0.6㎁/tip)$ at the bias of $V_A=500V\;and\; V_G=55V$. The fabricated device showed the stable electrical characteristics without degradation of field emission current for the long term operation except for the initial transient state. The low turn-on voltage and the high current stability of the Co-silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.