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비정질 인듐-갈륨-아연 산화물 기반 박막 트랜지스터의 NBIS 불안정성 개선을 위한 연구동향
윤건주,박진수,김재민,조재현,배상우,김진석,김현후,이준신,Yoon, Geonju,Park, Jinsu,Kim, Jaemin,Cho, Jaehyun,Bae, Sangwoo,Kim, Jinseok,Kim, Hyun-Hoo,Yi, Junsin 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.5
Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.