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나노구조를 기반으로 하는 Bi<sub>2</sub>Te<sub>3</sub> 소결과 그 시간에 따른 열전 특성
유수산나,강민석,김도경,문경숙,구상모,Yu, Susanna,Kang, Min-Seok,Kim, Do-Kyung,Moon, Kyung-Sook,Toprak, M.S.,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.9
Thermoelectric materials have been the topic of intensive research due to their unique dual capability of directly converting heat into electricity or electrical power into cooling or heating. Bismuth telluride ($Bi_2Te_3$) is the best-known commercially used thermoelectric material in the bulk form for cooling and power generation applications In this work we focus on the large scale synthesis of nanostructured undoped bulk nanostructured $Bi_2Te_3$ materials by employing a novel bottom-up solution-based chemical approach. Spark plasma sintering has been employed for compaction and sintering of $Bi_2Te_3$ nanopowders, resulting in relative density of $g{\cdot}cm^{-3}$ while preserving the nanostructure. The average grain size of the final compacts was obtained as 200 nm after sintering. An improved NS bulk undoped $Bi_2Te_3$ is achieved with sintered at $400^{\circ}C$ for 4 min holding time.
4H-SiC기판 위에 Aerosol Deposition으로 증착된 Al<sub>2</sub>O<sub>3</sub>박막의 후열처리 효과
유수산나,강민석,김홍기,이영희,구상모,Yu, Susanna,Kang, Min-Seok,Kim, Hong-Ki,Lee, Young-Hie,Koo, Sang-Mo 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8
$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.