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Insulated Metal Substrate를 사용한 고출력 전력 반도체 방열설계
정봉민,오애선,김선애,이가원,배현철 한국마이크로전자및패키징학회 2023 마이크로전자 및 패키징학회지 Vol.30 No.1
Today, the importance of power semiconductors continues to increase due to serious environmental pollution and the importance of energy. Particularly, SiC-MOSFET, which is one of the wide bandgap (WBG) devices, has excellent high voltage characteristics and is very important. However, since the electrical properties of SiC-MOSFET are heatsensitive, thermal management through a package is necessary. In this paper, we propose an insulated metal substrate (IMS) method rather than a direct bonded copper (DBC) substrate method used in conventional power semiconductors. IMS is easier to process than DBC and has a high coefficient of thermal expansion (CTE), which is excellent in terms of cost and reliability. Although the thermal conductivity of the dielectric film, which is an insulating layer of IMS, is low, the low thermal conductivity can be sufficiently overcome by allowing a process to be very thin. Electric-thermal co-simulation was carried out in this study to confirm this, and DBC substrate and IMS were manufactured and experimented for verification. 오늘날 심각한 환경 오염과 에너지의 중요성으로 전력 반도체의 중요도가 지속적으로 높아지고 있다. 특히wide band gap(WBG)소자 중 하나인 SiC-MOSFET은 우수한 고전압 특성을 가지고 있어 그 중요도가 매우 높다. 하지만 SiC-MOSFET의 전기적 특성이 열에 민감하기 때문에 패키지를 통한 열 관리가 필요하다. 본 논문에서는 기존 전력반도체에서 사용하는 direct bonded copper(DBC) 기판 방식이 아닌 insulated metal substrate(IMS) 방식을 제안한다. IMS 는 DBC에 비해 공정이 쉬우며 coefficient of thermal expansion (CTE)가 높아서 비용과 신뢰성 측면에서 우수하다. IMS 의 절연층인 dielectric film의 열전도도가 낮은 문제가 있지만 매우 얇은 두께로 공정이 가능하기 때문에 낮은 열 전도도를 충분히 극복할 수 있다. 이를 확인하기 위해서 이번 연구에서는 electric-thermal co-simulation을 수행하였으며 검증을위해 DBC 기판과 IMS를 제작하여 실험하였다.
고방열 기판 및 접합 소재를 이용한 파워 모듈의 열 해석
김동환(Dong-Hwan Kim),오애선(Ae-Sun Oh),안현식(Hyeon-sik Ahn),박은영(Eun-Young Park),김경현(Kyung-Hyun Kim),전성재(Sung-Jae Jeon),배현철(Hyun-Cheol Bae) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
In this paper, thermal analysis was performed to effectively manage the heat generated in a highpower module using SiC rather than the existing Si power module. The difference in the maximum temperature of the power module was analyzed using the other two substrates and the bonding materials. The substrates used were an existing Al2O3 DBC and an AlN DBC with high thermal conductivity. Then, PbSn Preform, which is used as a bonding material for existing power modules, and a heat dissipation efficient Ag/Cu Sintering Paste bonding material for thermal analysis and the results were compared.
Insulated Metal Substrate의 Top Metal과 Bottom Metal 두께 변화에 따른 전력 모듈 열 방출 특성 분석
박성효(Seong-Hyo Park),정봉민(Bong-Min Jeong),오애선(Ae-Seon Oh),김선애(Seon-Ae Kim),석오균(O-Gyun Seok),배현철(Hyun-Cheol Bae) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
Direct Bonded Copper (DBC) commonly used in Power Module can cause cracks due to the Coefficient of Thermal Expansion (CTE) mismatch between Cu and ceramic. Insulated metal substrate (IMS) are proposed to overcome these disadvantages of DBCs. Unlike the existing IMS Power module, it introduces the integrated structure of bottom metal and base plate. The dielectric of IMS has a lower heat dissipation capacity than the ceramic of DBC due to the low thermal conductivity of the dielectric, but to overcome this, the heat dissipation ability is improved by changing the thickness of the top metal and bottom metal. In this paper, thermal analysis simulation is conducted using COMSOL MULTIPHYSICS. Compared to DBC substrates using Al2O3 Ceramics, the top metal thickness of the IMS substrate is changed to 0.3mm to 2.5mm, and the heat dissipation ability is observed accordingly. In addition, the bottom metal thickness is changed to 3mm to 5mm and observed. The thicker the thickness of the top and bottom metal, the better the heat dissipation ability.
Heavy Copper IMS 파워 모듈을 이용한 하프브리지 DC/DC컨버터 특성 비교
양세동(Se-dong Yang),손현수(Hyeon-su Son),강현식(Kang hyeon sik),김가인(Ga-In Kim),신민호(Min-Ho Shin),오애선,배현철,이정효(Jung-Hyo Lee) 한국조명·전기설비학회 2021 한국조명·전기설비학회 학술대회논문집 Vol.2021 No.11
This paper compares the performance of a heavy copper IMS power module with the commercialized silicon Si-based IGBT In order to evaluate the performance of each device, a comparison is performed on the half-bridge DC/DC converter. Si-based IGBT performance evaluation of IGBT and heavy copper IMS, fixed duty ration is applied, the efficiency according to the internal resistance according to the output voltage may be known. Based on this, it was verified through experiments.