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The Recrystallization of Polysilicon in SOI by $Co_2$ Laser Annealing
오민록,안철,Oh, Min-Rok,An, Chul The Institute of Electronics and Information Engin 1987 전자공학회논문지 Vol.24 No.6
The recrystallization of polysilicon layer deposited on SiO2 was attempted by means of CO2 laser annealing in this paper. SiO2 layer of 13000\ulcornerthick and polysilicon layer of 6000\ulcornerthick were successively deposited on (100) Si wafer by thermal oxidation and LPCVD, respectively. Prior to the annealings the polysilicon layer was defined in small island patterns by means of photolithography. After the annealing an increase in grain size from 1000\ulcornerto 2-10 =\ulcorner was observed by SEM.
1100 ${\AA}$의 베이스 폭을 갖는 다결정 실리콘 자기정렬 트랜지스터 특성 연구
구용서,안철,Koo, Yong-Seo,An, Chul The Institute of Electronics and Information Engin 1993 전자공학회논문지-A Vol.30 No.10
This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.
곽원영,구용서,안철,Kwak, Won-Young,Koo, Yong-Seo,An, Chul 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.4
In this paper, algeration of electical characteristics is analyzed when the operating temperature of MOSFET, BJT and CMOS/BiCMOS inverter is lowered from 300K to 77K. As the operating temperature is lowered, electric characteristics of MOSFET are enhanced generally but, those of bipolar transistor are degraded because current gain is reduced by BGN(Band Gap Narrowing) effect. For the inverter considered in this work, switching characteristics of PSA-BiCMOS inverter are enhanced by the electrical characteristics enhancement of MOSFET when the operating temperature is reduced to 200K, while under 200K, those of PSA-BiCMOS inverter are degraded because the degradation of BJT impacts on the inverter circuit.
$Co_2$ Laser Annealed SOI-PIN Photodiode Fabrication and its Electrical Characteristics
장선호,김기홍,안철,Chang, Sun-Ho,Kim, Gi-Hong,An, Chul The Institute of Electronics and Information Engin 1988 전자공학회논문지 Vol.25 No.9
PIN-Photodiodes were fabricated with CO2 laser annealed SOI and their electric characteristics were measured. Dark current decreased and photocurrent-dark current ratio increased as the grain size of polycrystalline silicon in intrinsic region increased. In case of the largest grain, 10-20um, dark current was 30 n A (at - 4V) and photocurrent was proportional to light intensity.
고주파 대역에서 Dielectric Rod Resonator 방법에 의한 저유전 손실 물질의 유전 특성 측정
김근영,심화섭,안철,장익수,Kim, Geun-Young,Shim, Hwa-Sup,An, Chul,Chang, Ik-Soo 대한전자공학회 1990 전자공학회논문지 Vol. No.
Dielectric rod resonator 방법을 이용하여 고주파 대역에서 낮은 유전 손실을 갖는 유전체의 유전 특성을 측정하는 이론과 실험결과를 보였다. 유전체 시편과 금속 도체판 사이에 존재하는 공기층 효과를 최소화하기 위해 $TE_{011}$ mode 공진 주파수를 이용하였다. 컴퓨터를 사용하여 공진 주파수와 시편 크기, 2-dB 대여폭으로부터 유전 특징을 계산하였다. 측정의 오차 범위는 유전 상수인 경우 ${\pm}3{\%}$ 유전 손실인 경우 ${\pm}12{\%}$ 이내였다. Theory and experimental results of measuring the microwave dielectric characteristics of low-loss materials by using dielectric rod resonator method are presented. The $TE_{011}$ mode resonance frequency was adapted to minimize the effect of the air gap between the rod and the conducting plates. The dielectric properties were computed from the resonance frequency, sample geometry and 3 dB bandwidth. The error of measurements was within ${\pm}3{\%}$ for dielectric constant and was within ${\pm}12{\%}$ for dielectric loss.
A Study on the Characteristics of PSA Device using RTA Process and Trench Technology
구용서,강상원,안철,Koo, Yong-Seo,Kang, Sang-Won,An, Chul The Institute of Electronics and Information Engin 1991 전자공학회논문지-A Vol.28 No.9
This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.
$xMgTiO_3$(1-x) ($Na_{1/2}Ln_{1/2}$) $TiO_3$(Ln = La, Pr, Nd, Sm)의 초고주파 유전특성에 관한 연구
김덕환,임상규,안철,Kim, Duck-Hwan,Lim, Sang-Kyu,An, Chul 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.10
(Na½Ln½) TiO₃(Ln = La, Pr, Nd, Sm)은 양의 온도계수(190 ∼ 480ppm/℃), 고유전율(99∼127)의 특성을 갖고 있다. 반면에 MgTiO₃는 음의 온도계수(-45ppm/℃), 저유전손실(110,000㎓)을 갖고 있다. 그래서 xMgTiO₃(1-x) (Na½Ln½) TiO₃의 유전특성에 관심을 갖게 되었고, 초고주파 대역에서의 유전특성을 측정하고 미세구조를 관찰하여, 몰비변화와 소결온도변화에 따른 경향성을 파악하였으며, 그 원인을 연구하였다. 그 결과 MgTiO₃와 (Na½Ln½) TiO₃는 구조적으로 새로운 고용체나 이차상을 형성하지 않는 혼합상을 이루고 있었다. 그리고 이들의 유전특성은 (Na½Ln½) TiO₃와 MgTiO₃의 중간 값을 나타냈고, logarithmic mixing rule로써 유전특성을 예측할 수 있다. 이중에서 온도에 안정한 조성은 Ln = La, Pr, Nd으로 치환되었을 경우 각각 x = 0.9, 0.87, 0.84이었다. 이때의 유전율은 22 ∼25, Qf값은 55000 ∼ 28000㎓를 나타내었다. 이로써 온도에 안정한 유전특성을 갖는 새로운 유전체 재료를 개발하였으며, 특히 Ln = La으로 치환되었을 경우 다른 조성에 비하여 유전특성이 좋을 뿐아니라, 소결온도 범위가 넓어 공정상의 잇점을 가지고 있다. ($Na_{1/2}Ln_{1/2}$)$TiO_3$ceramics have a high relative dielectric constant and a positive temperature coefficient of resonant frequency ($\tau_f$)(where Ln represents a lanthanide: $La^{+3}$, $Pr^{+3}$, $Nd^{+3}$ and $Sm^{+3}$). On the other hand, $MgTiO_3$ ceramic has a high Qf value and a negative temperature coefficient. So We have investigated the microwave dielectric properties of $xMgTiO_3$-(1-x) ($Na_{1/2}Ln_{1/2}$)$TiO_3$. In these systems, there are no clues on solid-solution and secondary phase. There are mixed phases with $MgTiO_3$and ($Na_{1/2}Ln_{1/2}$)$TiO_3$ phases. Its dielectric characteristics (Qf, temperature coefficient and dielectric constant) are intermediate between ($Na_{1/2}Ln_{1/2}$)$TiO_3$ and $MgTiO_3$ and are predictable by the logarithmic mixing rule. The dielectric ceramic compositions temperature coefficient each approximates to zero at Ln=La, x=0.9, Ln=Pr, x=0.87, and Ln=Nd, x=0.84. At this time, there are Qf values in the range of 55,000 to 28,00GHz and relative dielectric constants in the range of 22 to 25.
Grooved $SiO_2$ 박막을 갖는 Mach-Zehnder Ti:$LiNbO_3$ 광변조기의 진행파형 CPW 전극설계
한영탁,김창민,윤형도,임상규,안철,구경환,Han, Young-Tak,Kim, Chang-Min,Yoon, Hyung-Do,Lim, Sang-Kyu,An, Chul,Koo, Kyoung-Hwan 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.11
Goodved $SiO_2$ 박막을 갖는 Mach-Zehnder(M-Z)형태의 $Ti:LiNbO_3$ 진행파 광변조기의 전극구조를 변화시켜가며 유한요소법에 의한 해석을 수행하였다. 최적의 설계치를 추출하였으며, 제작된 전극에 대하여 특성임피던스($Z_o$), 마이크로파 유효굴절률($N_{eff}$), 감쇠정수($a_o$)를 측정하여 그 결과를 이론치와 비교하였다. 전극두께가 11${\mu}m$이고, $SiO_2$ 완중박막을 식각한 전극에 대하여, RF 측정결과로부터 계산된 3dB 변조대역폭은 18GHz로 나타났다. A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.