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Cu(Mg) 박막의 Time Dependent Dielectric Breakdown 특성 평가
안정욱,황상수,박영배,주영창 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
Electrical properties and time dependent dielectric breakdown (TDDB) characteristics of Cu (0.7 at.% Mg) alloy films are investigated to improve the reliability of Cu interconnects used in microelectronic devices. After Cu(Mg) films are annealed in vacuum at 400℃ for 30 min, resistivity decreases from 3.4 to 2.0 μΩcm and, thin and continuous MgO layers form both on Cu(Mg) film surface and on Cu(Mg)/SiO₂ interface. Metal-Oxide-Silicon (MOS) capacitors composed of Cu(Mg) film deposited on thermal oxide grown on Si wafer are subjected to bias temperature stressing at 180 through 220℃ under electric fields of 1.5 through 2.6 MV/cm. Median time to failure (MTTF) and activation energy of Cu(Mg)/SiO₂ are much larger than those of pure Cu/SiO₂. Cu drifts into dielectric are inhibited by the continuous Mg oxide formed at Cu(Mg)/SiO₂ interface which improve interfacial adhesion and finally lead to better interconnect reliabilities. (Received October 29, 2004)