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$\textrm{BF}_2$가 고농도로 이온주입된 $\textrm{p}^{+}$-Si 영역상에 Co/Ti 이중막 실리사이드의 형성
장지근,신철상,Jang, Ji-Geun,Sin, Cheol-Sang Materials Research Society of Korea 1999 한국재료학회지 Vol.9 No.2
보른이 고농도 도핑된 $\textrm{p}^{+}$-Si 영역상에서 비저항이 낮고 열적 안정성이 우수한 Co/Ti 이중막 실리사이드의 형성을 연구하였다. 본 연구에서는 Co/Ti 이중막 실리사이드는 청결한 $\textrm{p}^{+}$-Si 기판상에 Co(150${\AA}$)/Ti(50${\AA}$) 박막을 E-beam 기술로 진공증착하고 질소분위기($\textrm{10}^{-1}$atm)에서 2단계 RTA 공정(1차열처리:$650^{\circ}C$/20sec, 2차열처리:$800^{\circ}C$/20sec)을 수행하여 제작된다. 실험에서 얻어진 Co/Ti 이중막 실리사이드는 약 500${\AA}$의 균일한 두께를 갖고 18$\mu\Omega$-cm의 낮은 비저항 특성을 나타내었으며, $1000^{\circ}C$에 이르기까지 장시간 후속 열처리를 실시하여도 면저항 변화나 열응집 현상이 발생되지 않았다. We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.
고농도 도핑된 n+-Si 영역상에 Co/Ti 이중막 실리사이드의 형성과 특성연구
장지근,신철상 단국대학교 1999 論文集 Vol.34 No.-
We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily As doped n^+-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co(150Å)/Ti(50Å) films on the As-implanted n^+-Si region in an E-beam evaporator and performing the two step RTA process (first annealing:650℃/20sec. second annealing:800℃/20sec) in a N_2 ambient with the pressure of 10^-1atm, Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about 19μΩ-㎝ and the uniform thickness of about 500 Å without increase of sheet resistance and occurrence of agglomeration under the long post-annealing time up to 1000℃.
Co/Ti 이중막 실리사이드 접촉을 갖는 p$^{+}$-n 극저접합의 형성
장지근,엄우용,신철상,장호정 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.5
Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$..
Co 및 Co/Ti 이중막에 의해 형성된 Co-실리사이드의 열적 불안정성
장지근,엄우용,신철상,장호정 대한전자공학회 1996 전자공학회논문지-A Vol.33 No.11
We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.