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Effect of Sn Content on Filler and Bonding Characteristics of Active Metal Brazed Cu/Al2O3 Joint
신지오,ASHUTOSH SHARMA,정도현,정재필 대한금속·재료학회 2018 대한금속·재료학회지 Vol.56 No.5
This study examined the effects of the Sn content in a pure active metal filler Ag-Cu-Ti for the brazing of a Cu/ Al2O3 joint. The optimal content of Sn to effectively wet alumina was 5 wt%. The microstructure of the brazed joint showed the presence of an Ag-rich matrix and a Cu-rich phase, and Cu- Ti intermetallic compounds were observed along the bonded interface. The intermetallic compounds (IMCs) in the filler are found to increase when the Sn content in the alloy approaches to 10 wt%. These results suggest an extremely significant bonding strength of Cu/Al2O3 joint using the Ag-Cu-Ti+Sn filler. The shear strength of the brazed joint increased with Sn content up to 5 wt%, reaching a maximum at ≈15 MPa. In addition, the strength decreased when the Sn content was higher than 5 wt%.
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기세호,신지오,정일호,김원중,정재필,Kee, Se-Ho,Shin, Ji-Oh,Jung, Il-Ho,Kim, Won-Joong,Jung, Jae-Pil 대한용접접합학회 2014 대한용접·접합학회지 Vol.32 No.3
TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.
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