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정일호,이광욱,조명곤 한국스포츠리서치 2003 한국 스포츠 리서치 Vol.14 No.2
The purpose of this study was to compared the blood variance following spontaneously exercise for 10weeks in healthy the elderly. When spontaneously exercise, for 10 weeks in exercise intensities between low and middle exercise intensities was participated, the HDL-C in factors of anti-atherosclerosis increased highly. Also, HDL-C/Total-C and HDL-C/LDL-C ratio in atherosclerosis index was improved. The results suggest that, in general, in participation aerobic exercise spontaneously was prevented on disease of lifestyle in the elderly.
Activation plans of Public Transport based on Urban Network Analysis
정일호,최민제,김가현,이승재 대한교통학회 2022 대한교통학회 학술대회지 Vol.87 No.-
본 연구에서는 광역급행철도 도입에 따른 도시철도 네트워크 중심성 변화를 분석하고 대중교통 활성화에 따른 환경 편익을 분석한다. 전 세계적으로, 기후 위기에 대한 관심이 높아지고 환경과 탄소 배출에 대한 관심이 높아지고 있다. 한국을 비롯한 세계 각국이 대기 중 온실가스 순배출량을 0으로 만들겠다는 Netzero 2050 정책을 선포하고 있다. 본 연구에서는 교통계획과 교통수요관리의 측면을 검토하였다. GTX(Great Train eXpress)의 도입에 따른 도시 철도망의 중심성 변화를 검토하였다. Urban Network Analysis의 결과는 여의도, 신도림, 상봉역 등이 장래 수도권 네트워크에서 중요한 역할을 하는 것으로 나타났다. 또한 장래에 중요해지는 역을 기준으로 대중교통 활성화 시나리오(접근성 개선)을 적용한 결과 대략적인 환경적 편익의 결과를 얻을 수 있었다. Net-zero 2050을 달성하기 위하여 대중교통 활성화 정책의 효과를 지하철 역의 관점에서 분석했다. 대중교통 활성화에 대한 정책은 탄소 배출량 감소에 대한 긍정적으로 기여할 수 있다.
Analysis of the Electrical Characteristics and Structure of Cu-Filled TSV with Thermal Shock Test
정일호,노명훈,Flora Jung,Wan Ho Song,Michael Mayer,정재필 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3
The electrical characteristics and failure of a Through-Silicon Via (TSV) were investigated using a thermal shock test. The electrical characteristics, such as resistance (R), self-inductance (Ls), self-capacitance (Cs), and mutual capacitance (Cm), were extracted using a T-equivalent circuit. A cross section of the Cu-filled via was observed by field emission-scanning electron microscopy and the electrical characteristics were measured using a commercial Agilent E4980A LCR Meter. The experimental results revealed R, Ls, Cs, and Cm values of 3.2 mΩ, 29.3 pH, 12 fF, and 0.42 pF, respectively. Cm occurred between the charge-holding TSVs, which changed from 0.42 pF to 0.26 pF due to a permittivity transition of the Cu ion drift. After 1,000 cycles of a thermal shock test, cracks were observed between the opening and around the side of the TSV and Si wafer due to mismatch of the coefficient of thermal expansion between the Cu-plug and Si substrate.
Electrical Characteristics and Thermal Shock Properties of Cu-Filled TSV Prepared by Laser Drilling
정일호,정도현,신규식,Dong Sik Shin,정재필 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
The electrical characteristics and thermal shock properties of a Through Silicon Via (TSV) for the three dimensional (3D) stacking of a Si wafer were investigated. The TSVs were fabricated on a Si wafer by a laser drilling process. The via had a diameter of 75 μm at the via opening and a depth of 150 μm. A daisy chain was made for testing electrical characteristics, such as Rsh (sheet resistance), Rc (contact resistance) and Z0 (characteristic impedance). After Cu filling, a cross section of the via was observed by Field Emission-Scanning Electron Microscopy. The electrical characteristics were measured using a commercial impedance analyzer and probe station, which revealed the values of Rsh, Rc and Z0 as 35.5 mΩ/sq, 25.4 mΩ and 48.5 Ω,respectively. After a thermal shock test of 500 cycles, no cracks were observed between the TSV and Si wafer. This study confirms that the laser drilling process is an effective method for via formation on a Si wafer for 3D integration technology.