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결정질 실리콘 태양전지를 위한 PA-ALD Al<sub>2</sub>O<sub>3</sub> 막의 패시베이션 효과 향상 연구
송세영,강민구,송희은,장효식,Song, Se Young,Kang, Min Gu,Song, Hee-Eun,Chang, Hyo Sik 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.10
Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.
결정질 실리콘 태양전지 응용을 위한 PA-ALD를 이용한 Al2O3 특성 분석
송세영(Se Young Song),박제준(Je-Jun Park),강민구(Min Gu Kang),송희은(Hee-eun Song),장효식(Hyo Sik Chang) 한국태양에너지학회 2012 한국태양에너지학회 학술대회논문집 Vol.2012 No.11
Aluminum oxide(Al2O3) flim by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. The passivation layer with good quality is important for high-efficiency silicon solar cell. Since Al2O3 has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, Al2O3 by ALD process needs very long process time, which is not applicable in the conventional silicon solar cell. In this paper, plasma-assisted ALD was applied to form Al2O3 to reduce the process time. Plasma-assisted atomic layer deposition (PA-ALD) technique was used to trimethylaluminum (TMA) precursors and O2 gas plasma species leading to self limiting surface reaction. this is adopted as a promising method for growing Al2O3 thin films. To optimize the Al2O3 layer properties, the deposition temperature was changed in range of 150-250℃, then the annealing temperature and time were varied. As a result, aluminum oxide (Al2O3) flim on the silicon wafer formed in the deposition temperature, the annealing temperature and time with 250℃, 400℃ and 10 min, respectively, showed the best lifetime of 1610μs.
전창완,송세영 순천향대학교 부설 산업기술연구소 2004 순천향 산업기술연구소논문집 Vol.10 No.1
A GPS receiver supplies user with position information as accuracy within 4~50m from more 24 satellites. The GPS receiver offers calculated position, speed, heading, state of satellite, current time errors to users as special format. In the GPS system structure, GPS signals from GPS receiver and antenna mounted on moving vehicle are often distorted, contaminated by various noise, and blocked by tunnel or tall buildings. Sometimes it is difficult to estimate status of the vehicle whether stopping or moving in low speed. Therefore it is needed to pre-process the signals, is proposed. For this, GPS data obtaining of various GPS receiver are analyzed and classified based on dynamic characteristic, example for stopping, driving. Several test results are proposed to verify the usefulness of the algorithm.