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Cascode 구조의 5.8 ㎓ Wireless LAN 용 CMOS 저잡음 증폭기 설계
손철호(Chul-Ho Son),신이주(Yi-Joo Shin),김태원(Tae-won Kim),한대훈(Dae-Hoon Han),김복기(Bok-Ki Kim) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
The proposed low noise amplifier design applied to the cascade topology based on TSMC 0.18 ㎛ RF CMOS technology for 5.8 ㎓ WLAN applications. The simulation results show power gain of 16.1 ㏈, noise figure of 1.84 ㏈ and third-order input intercept point of -13.53 ㏈m while dissipates the DC current of 3.9㎃ at supply voltage of 1.8V. The chip die size 835 ×x 598 (㎛²)
5.25 ㎓ CMOS Low Noise Amplifier for WLAN applications
한대훈(Dae-Hoon Han),신이주(Yi-Joo Shin),김태원(Tae-Won Kim),손철호(Chul-Ho Son),김복기(Bok-Ki Kim) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, we present a 5.25 ㎓ CMOS LNA (Low Noise Amplifier) for Wireless LAN applications. A popular cascode topology for LNA design is employed to satisfy both noise and high gain. The PCSNIM (Power constrained simultaneous noise and input matching) technique is applied to achieve simultaneous noise and input matching at any given amount of power dissipation. The simulated results show that both Su and S₂₂ are less than -10㏈ over 5.15 ~ 5.35 ㎓, 1.81㏈ noise figure, -17.4㏈m IIP3 and 17.1㏈ power gain at 5.25 ㎓ while consuming 8.78㎽ DC power using TSMC 0.18㎛ RF CMOS technology. The layout area is 870 x 610㎛².