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$TiO_2$분말 제조 및 Verneuil 법에 의한 Rutile 단결정 성장
전형탁,김복희,손선기,오근호 한국결정성장학회 1992 韓國結晶成長學會誌 Vol.2 No.1
$TiCl_4$와(NH_4)_2SO_4$를 액상 반응시켜 암모늄 티타늄 설페이트를 형성시킨 뒤 하소하여 미립의 $TiO_2$분말을 만들었다. Anatase 분말로 Verneuil장치에서 Rutile단결정을 성장시킨 뒤 물성을 조사하였다. 최적의 성장조건은 $H_2:O_2=3:1$ 성장온도는 $1900^{\circ}C$ 분말공급속도는 10g/hr였다. Fine $TiO_2$ powders were synthesized from ammonium titanium sulphate which produced from $TiCI_4$, and$(NH_4)_2$ SO. solution. Rutile single crystal were grown by the verneuil method with anatase powders and investigated the property of rutile crystal. The optimun growing conditions were as follows $\cdot$The ratio of hydrogen gas and oxygen gas; 3: 1 $\cdot$Growing temperature: $1900^{\circ}C$ $\cdot$The feeding rate of powders: 10g/hr
주경,배상열,최종건,오근호,손선기,변영재,전형탁,Joo, K.,Bae, S.Y.,Choi, J.K.,Orr, K.K.,Son, S.K.,Beun, Y.J.,Chun, H.T. 한국세라믹학회 1988 한국세라믹학회지 Vol.25 No.5
Verneuil method uses oxyhydrogen flame for its heat source. This method was used to grow corundum monocrystals. Parametersof this method are feeding rate, gas pressure, lowering rate and growth axis. These parameters were examined. Crystals's qualities and shapes are affected by these parameters. Crystals having good qualities and shape were grown under the conditions that feeding rate, 0.2∼0.5g/min, lowering rate, 10∼20mm/hr ; gas pressure, 3∼4psi ; growth axis was shifted 60 degrees from c axis.
EFG법에 의한 Sapphire Ribbon 단결정 성장
박신서,류두형,정재우,최종건,오근호,손선기,변영재,전형탁 한국세라믹학회 1990 한국세라믹학회지 Vol.27 No.6
Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.