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Semiconducting Channel Self-Imposed in Metallic Graphene Using an Oxygen Ion Reaction
서금영,김동출,주상현,정민욱,안기석 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.2
A graphene transistor was simply fabricated by employing ZnO deposition into metallic graphene,for which a source-drain electrode and a semiconductor channel could be formed concurrently. Theelectric properties of graphene could be adjusted by using ZnO thin film because oxygen was injectedinto the surface of metallic graphene. The surface oxidation of metallic graphene results in enhancedp-type semiconductor characteristics, especially in an improved on/off current ratio. The degree ofthe self-imposed semiconducting property is proportional to the degree of oxidation occurring onthe graphene surface.
Control of Oxygen Vacancy Concentration in ZnO Nanowires Containing Sulfur as a Reducing Agent
서금영,Misook Suh,주상현 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.3
Light illumination influences the electrical characteristics and stability of oxide nanowire transistors. In this study, transistor characteristics of oxygen-vacancy-rich ZnO nanowires under illumination were investigated. In order to control the oxygen vacancies on the surface of ZnO, sulfur was used as a reducing agent during nanowire growth. Unlike pure nanowires, ZnO nanowires with sulfur as a reducing agent exhibited a dramatically enhanced green emission peak at around 520 nm in the photoluminescence spectrum, which is primarily generated under oxygen-deficient ambient conditions. The threshold voltage of a nanowire transistor using ZnO with sulfur showed no significant change under illumination. In contrast, the threshold voltage of pure ZnO shifted significantly in the negative direction under illumination. This phenomenon may arise from the fact that light illumination on the channel region of ZnO reduced with sulfur cannot generate additional oxygen vacancies on the nanowire surface because oxygen vacancies were created almost to the saturation point during nanowire growth.